Types of Semi Conductors
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365592 Pure \(Si\) at 300 \(K\) has electron \(({n_e})\) concentrations of \(1.5 \times {10^{16}}{m^{ - 3}}\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) \({n_e}\) in the doped \(Si\) is

1 \(5 \times {10^9}\)
2 \(7 \times {10^9}\)
3 \(9 \times {10^9}\)
4 \(8 \times {10^9}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365593 Pick out the statement which is not correct.

1 At a low temperature, the resistance of a semiconductor is very high.
2 Movement of holes is restricted to the valence band only
3 Width of the depletion region increases as the forward bias voltage increases in case of a \(N\) - \(P\) junction diode
4 In a forward bias condition, the diode heavily conducts.
KCET - 2010
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365594 An intrinsic semiconductor has a resistivity of \(0.50\,\Omega m\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39\;{m^2}{V^{ - 1}}{S^{ - 1}}\) and \(0.11\;{m^2}{V^{ - 1}}{S^{ - 1}}\) respectively.

1 \(1.2 \times {10^{18}}\;{m^{ - 3}}\)
2 \(2.5 \times {10^{19}}\;{m^{ - 3}}\)
3 \(1.9 \times {10^{20}}\;{m^{ - 3}}\)
4 \(30 \times {10^{19}}\;{m^{ - 3}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365595 In an intrinsic semiconductor, the number of conduction electron is \(6 \times 10^{19}\) per cubic meter. How many holes are there in a sample of size \(1\;cm \times 1\;cm \times 2\;mm\)?

1 \(5 \times 10^{2}\)
2 \(12 \times 10^{-12}\)
3 \(12 \times 10^{12}\)
4 \(4 \times 10^{8}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365596 In intrinsic semiconductor conductivity is

1 low
2 average
3 high
4 very low
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365592 Pure \(Si\) at 300 \(K\) has electron \(({n_e})\) concentrations of \(1.5 \times {10^{16}}{m^{ - 3}}\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) \({n_e}\) in the doped \(Si\) is

1 \(5 \times {10^9}\)
2 \(7 \times {10^9}\)
3 \(9 \times {10^9}\)
4 \(8 \times {10^9}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365593 Pick out the statement which is not correct.

1 At a low temperature, the resistance of a semiconductor is very high.
2 Movement of holes is restricted to the valence band only
3 Width of the depletion region increases as the forward bias voltage increases in case of a \(N\) - \(P\) junction diode
4 In a forward bias condition, the diode heavily conducts.
KCET - 2010
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365594 An intrinsic semiconductor has a resistivity of \(0.50\,\Omega m\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39\;{m^2}{V^{ - 1}}{S^{ - 1}}\) and \(0.11\;{m^2}{V^{ - 1}}{S^{ - 1}}\) respectively.

1 \(1.2 \times {10^{18}}\;{m^{ - 3}}\)
2 \(2.5 \times {10^{19}}\;{m^{ - 3}}\)
3 \(1.9 \times {10^{20}}\;{m^{ - 3}}\)
4 \(30 \times {10^{19}}\;{m^{ - 3}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365595 In an intrinsic semiconductor, the number of conduction electron is \(6 \times 10^{19}\) per cubic meter. How many holes are there in a sample of size \(1\;cm \times 1\;cm \times 2\;mm\)?

1 \(5 \times 10^{2}\)
2 \(12 \times 10^{-12}\)
3 \(12 \times 10^{12}\)
4 \(4 \times 10^{8}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365596 In intrinsic semiconductor conductivity is

1 low
2 average
3 high
4 very low
For More Updates join with Us
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365592 Pure \(Si\) at 300 \(K\) has electron \(({n_e})\) concentrations of \(1.5 \times {10^{16}}{m^{ - 3}}\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) \({n_e}\) in the doped \(Si\) is

1 \(5 \times {10^9}\)
2 \(7 \times {10^9}\)
3 \(9 \times {10^9}\)
4 \(8 \times {10^9}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365593 Pick out the statement which is not correct.

1 At a low temperature, the resistance of a semiconductor is very high.
2 Movement of holes is restricted to the valence band only
3 Width of the depletion region increases as the forward bias voltage increases in case of a \(N\) - \(P\) junction diode
4 In a forward bias condition, the diode heavily conducts.
KCET - 2010
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365594 An intrinsic semiconductor has a resistivity of \(0.50\,\Omega m\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39\;{m^2}{V^{ - 1}}{S^{ - 1}}\) and \(0.11\;{m^2}{V^{ - 1}}{S^{ - 1}}\) respectively.

1 \(1.2 \times {10^{18}}\;{m^{ - 3}}\)
2 \(2.5 \times {10^{19}}\;{m^{ - 3}}\)
3 \(1.9 \times {10^{20}}\;{m^{ - 3}}\)
4 \(30 \times {10^{19}}\;{m^{ - 3}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365595 In an intrinsic semiconductor, the number of conduction electron is \(6 \times 10^{19}\) per cubic meter. How many holes are there in a sample of size \(1\;cm \times 1\;cm \times 2\;mm\)?

1 \(5 \times 10^{2}\)
2 \(12 \times 10^{-12}\)
3 \(12 \times 10^{12}\)
4 \(4 \times 10^{8}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365596 In intrinsic semiconductor conductivity is

1 low
2 average
3 high
4 very low
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365592 Pure \(Si\) at 300 \(K\) has electron \(({n_e})\) concentrations of \(1.5 \times {10^{16}}{m^{ - 3}}\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) \({n_e}\) in the doped \(Si\) is

1 \(5 \times {10^9}\)
2 \(7 \times {10^9}\)
3 \(9 \times {10^9}\)
4 \(8 \times {10^9}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365593 Pick out the statement which is not correct.

1 At a low temperature, the resistance of a semiconductor is very high.
2 Movement of holes is restricted to the valence band only
3 Width of the depletion region increases as the forward bias voltage increases in case of a \(N\) - \(P\) junction diode
4 In a forward bias condition, the diode heavily conducts.
KCET - 2010
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365594 An intrinsic semiconductor has a resistivity of \(0.50\,\Omega m\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39\;{m^2}{V^{ - 1}}{S^{ - 1}}\) and \(0.11\;{m^2}{V^{ - 1}}{S^{ - 1}}\) respectively.

1 \(1.2 \times {10^{18}}\;{m^{ - 3}}\)
2 \(2.5 \times {10^{19}}\;{m^{ - 3}}\)
3 \(1.9 \times {10^{20}}\;{m^{ - 3}}\)
4 \(30 \times {10^{19}}\;{m^{ - 3}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365595 In an intrinsic semiconductor, the number of conduction electron is \(6 \times 10^{19}\) per cubic meter. How many holes are there in a sample of size \(1\;cm \times 1\;cm \times 2\;mm\)?

1 \(5 \times 10^{2}\)
2 \(12 \times 10^{-12}\)
3 \(12 \times 10^{12}\)
4 \(4 \times 10^{8}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365596 In intrinsic semiconductor conductivity is

1 low
2 average
3 high
4 very low
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365592 Pure \(Si\) at 300 \(K\) has electron \(({n_e})\) concentrations of \(1.5 \times {10^{16}}{m^{ - 3}}\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) \({n_e}\) in the doped \(Si\) is

1 \(5 \times {10^9}\)
2 \(7 \times {10^9}\)
3 \(9 \times {10^9}\)
4 \(8 \times {10^9}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365593 Pick out the statement which is not correct.

1 At a low temperature, the resistance of a semiconductor is very high.
2 Movement of holes is restricted to the valence band only
3 Width of the depletion region increases as the forward bias voltage increases in case of a \(N\) - \(P\) junction diode
4 In a forward bias condition, the diode heavily conducts.
KCET - 2010
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365594 An intrinsic semiconductor has a resistivity of \(0.50\,\Omega m\) at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are \(0.39\;{m^2}{V^{ - 1}}{S^{ - 1}}\) and \(0.11\;{m^2}{V^{ - 1}}{S^{ - 1}}\) respectively.

1 \(1.2 \times {10^{18}}\;{m^{ - 3}}\)
2 \(2.5 \times {10^{19}}\;{m^{ - 3}}\)
3 \(1.9 \times {10^{20}}\;{m^{ - 3}}\)
4 \(30 \times {10^{19}}\;{m^{ - 3}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365595 In an intrinsic semiconductor, the number of conduction electron is \(6 \times 10^{19}\) per cubic meter. How many holes are there in a sample of size \(1\;cm \times 1\;cm \times 2\;mm\)?

1 \(5 \times 10^{2}\)
2 \(12 \times 10^{-12}\)
3 \(12 \times 10^{12}\)
4 \(4 \times 10^{8}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365596 In intrinsic semiconductor conductivity is

1 low
2 average
3 high
4 very low