365588 A pure semiconductor has equal electron and hole concentration of \({10^{16}}{m^{ - 3}}.\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) What is \({n_e}\) in the doped semiconductor?

365589 In \(n\)-type semiconductors the electron concentration is equal to

365590 A pure semiconductor has equal electron and hole concentration of \({10^{16}}\;{m^{ - 3}}\). Doping by indium increases \(n_{h}\) to \(5 \times {10^{22}}\;{m^{ - 3}}\). Then, the value \(n_{c}\) in the doped semiconductor is

365591 An \(n\)-type semiconductor has valence bond is 20\(meV\) below the conduction band. In a thermal collision, transferrable energy is \(KT\). The value of \(T\) for which electrons start to jump in conduction band is :

365588 A pure semiconductor has equal electron and hole concentration of \({10^{16}}{m^{ - 3}}.\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) What is \({n_e}\) in the doped semiconductor?

365589 In \(n\)-type semiconductors the electron concentration is equal to

365590 A pure semiconductor has equal electron and hole concentration of \({10^{16}}\;{m^{ - 3}}\). Doping by indium increases \(n_{h}\) to \(5 \times {10^{22}}\;{m^{ - 3}}\). Then, the value \(n_{c}\) in the doped semiconductor is

365591 An \(n\)-type semiconductor has valence bond is 20\(meV\) below the conduction band. In a thermal collision, transferrable energy is \(KT\). The value of \(T\) for which electrons start to jump in conduction band is :

365588 A pure semiconductor has equal electron and hole concentration of \({10^{16}}{m^{ - 3}}.\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) What is \({n_e}\) in the doped semiconductor?

365589 In \(n\)-type semiconductors the electron concentration is equal to

365590 A pure semiconductor has equal electron and hole concentration of \({10^{16}}\;{m^{ - 3}}\). Doping by indium increases \(n_{h}\) to \(5 \times {10^{22}}\;{m^{ - 3}}\). Then, the value \(n_{c}\) in the doped semiconductor is

365591 An \(n\)-type semiconductor has valence bond is 20\(meV\) below the conduction band. In a thermal collision, transferrable energy is \(KT\). The value of \(T\) for which electrons start to jump in conduction band is :

365588 A pure semiconductor has equal electron and hole concentration of \({10^{16}}{m^{ - 3}}.\) Doping by indium increases \({n_h}\) to \(4.5 \times {10^{22}}{m^{ - 3}}.\) What is \({n_e}\) in the doped semiconductor?

365589 In \(n\)-type semiconductors the electron concentration is equal to

365590 A pure semiconductor has equal electron and hole concentration of \({10^{16}}\;{m^{ - 3}}\). Doping by indium increases \(n_{h}\) to \(5 \times {10^{22}}\;{m^{ - 3}}\). Then, the value \(n_{c}\) in the doped semiconductor is

365591 An \(n\)-type semiconductor has valence bond is 20\(meV\) below the conduction band. In a thermal collision, transferrable energy is \(KT\). The value of \(T\) for which electrons start to jump in conduction band is :