365584 A potential difference of \(2 V\) is applied between the opposite faces of a Ge crystal plate of area \(1\;c{m^2}\) and thickness \(0.5\;mm\). If the concentration of electrons in \(Ge\) is \(2 \times {10^{19}}/{m^3}\) and mobilities of electrons and holes are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.14\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) respectively, then the current flowing through the plate will be
365586
Statement A :
The diffusion current in a \(p\)-\(n\) junction is from the \(p\)-side to the \(n\)-side.
Statement B :
The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is in forward biased.
365587 The number densities of electrons and holes in pure silicon at \(27^\circ C\) are equal and its value is \(1.5 \times {10^{16}}\;{m^{ - 3}}\). On doping with indium, the hole density increases to \(4.5 \times {10^{27}}\;{m^{ - 3}}\). The electron density in doped silicon will be:
365584 A potential difference of \(2 V\) is applied between the opposite faces of a Ge crystal plate of area \(1\;c{m^2}\) and thickness \(0.5\;mm\). If the concentration of electrons in \(Ge\) is \(2 \times {10^{19}}/{m^3}\) and mobilities of electrons and holes are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.14\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) respectively, then the current flowing through the plate will be
365586
Statement A :
The diffusion current in a \(p\)-\(n\) junction is from the \(p\)-side to the \(n\)-side.
Statement B :
The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is in forward biased.
365587 The number densities of electrons and holes in pure silicon at \(27^\circ C\) are equal and its value is \(1.5 \times {10^{16}}\;{m^{ - 3}}\). On doping with indium, the hole density increases to \(4.5 \times {10^{27}}\;{m^{ - 3}}\). The electron density in doped silicon will be:
365584 A potential difference of \(2 V\) is applied between the opposite faces of a Ge crystal plate of area \(1\;c{m^2}\) and thickness \(0.5\;mm\). If the concentration of electrons in \(Ge\) is \(2 \times {10^{19}}/{m^3}\) and mobilities of electrons and holes are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.14\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) respectively, then the current flowing through the plate will be
365586
Statement A :
The diffusion current in a \(p\)-\(n\) junction is from the \(p\)-side to the \(n\)-side.
Statement B :
The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is in forward biased.
365587 The number densities of electrons and holes in pure silicon at \(27^\circ C\) are equal and its value is \(1.5 \times {10^{16}}\;{m^{ - 3}}\). On doping with indium, the hole density increases to \(4.5 \times {10^{27}}\;{m^{ - 3}}\). The electron density in doped silicon will be:
365584 A potential difference of \(2 V\) is applied between the opposite faces of a Ge crystal plate of area \(1\;c{m^2}\) and thickness \(0.5\;mm\). If the concentration of electrons in \(Ge\) is \(2 \times {10^{19}}/{m^3}\) and mobilities of electrons and holes are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.14\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) respectively, then the current flowing through the plate will be
365586
Statement A :
The diffusion current in a \(p\)-\(n\) junction is from the \(p\)-side to the \(n\)-side.
Statement B :
The diffusion current in a \(p\)-\(n\) junction is greater than the drift current when the junction is in forward biased.
365587 The number densities of electrons and holes in pure silicon at \(27^\circ C\) are equal and its value is \(1.5 \times {10^{16}}\;{m^{ - 3}}\). On doping with indium, the hole density increases to \(4.5 \times {10^{27}}\;{m^{ - 3}}\). The electron density in doped silicon will be: