365567 The density of an electron - hole pair in a pure germanium is \(3 \times {10^{16}}{m^{ - 3}}\) at room temperature. On doping with aluminium the hole density increases to \(4.5 \times {10^{22}}{m^{ - 3}}\). Now the electron density (in \({m^{ - 3}}\)) in doped germanium will be

365568 Suitable impurities are added to a semiconductor depending on its use. This is done to

365569 A pure \(S i\) crystal has \(5 \times 10^{22}\) atoms \({m^{ - 3}}\). It is doped by 1 ppm concentration of pentavalent atoms. The number of holes is: \(\left( {{n_i} = 1.5 \times {{10}^{16}}\;{m^{ - 3}}} \right)\)

365570 The objective of adding impurities to a semiconductor is

365567 The density of an electron - hole pair in a pure germanium is \(3 \times {10^{16}}{m^{ - 3}}\) at room temperature. On doping with aluminium the hole density increases to \(4.5 \times {10^{22}}{m^{ - 3}}\). Now the electron density (in \({m^{ - 3}}\)) in doped germanium will be

365568 Suitable impurities are added to a semiconductor depending on its use. This is done to

365569 A pure \(S i\) crystal has \(5 \times 10^{22}\) atoms \({m^{ - 3}}\). It is doped by 1 ppm concentration of pentavalent atoms. The number of holes is: \(\left( {{n_i} = 1.5 \times {{10}^{16}}\;{m^{ - 3}}} \right)\)

365570 The objective of adding impurities to a semiconductor is

365567 The density of an electron - hole pair in a pure germanium is \(3 \times {10^{16}}{m^{ - 3}}\) at room temperature. On doping with aluminium the hole density increases to \(4.5 \times {10^{22}}{m^{ - 3}}\). Now the electron density (in \({m^{ - 3}}\)) in doped germanium will be

365568 Suitable impurities are added to a semiconductor depending on its use. This is done to

365569 A pure \(S i\) crystal has \(5 \times 10^{22}\) atoms \({m^{ - 3}}\). It is doped by 1 ppm concentration of pentavalent atoms. The number of holes is: \(\left( {{n_i} = 1.5 \times {{10}^{16}}\;{m^{ - 3}}} \right)\)

365570 The objective of adding impurities to a semiconductor is

365567 The density of an electron - hole pair in a pure germanium is \(3 \times {10^{16}}{m^{ - 3}}\) at room temperature. On doping with aluminium the hole density increases to \(4.5 \times {10^{22}}{m^{ - 3}}\). Now the electron density (in \({m^{ - 3}}\)) in doped germanium will be

365568 Suitable impurities are added to a semiconductor depending on its use. This is done to

365569 A pure \(S i\) crystal has \(5 \times 10^{22}\) atoms \({m^{ - 3}}\). It is doped by 1 ppm concentration of pentavalent atoms. The number of holes is: \(\left( {{n_i} = 1.5 \times {{10}^{16}}\;{m^{ - 3}}} \right)\)

365570 The objective of adding impurities to a semiconductor is