Types of Semi Conductors
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365558 In extrinsic semiconductors

1 The conduction band and valence band overlap
2 The gap between conduction band and valence band is near about 16\(eV\)
3 The gap between conduction band and valence band is near about 1\(eV\)
4 The gap between conduction band and valence band will be 100\(eV\) and more
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365559 The valency of impurity element for making \(n\)-type semiconductor is

1 \(3\)
2 \(5\)
3 \(4\)
4 \(7\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365560 If a small amount of antimony is added to germanium crystal

1 The positive terminal of the battery is connected to \(p\)-side and the depletion region becomes thin
2 The antimony becomes an acceptor atom
3 There will be more free electrons than holes in the semiconductor
4 The positive terminal of the battery is connected to \(p\)- side and the depletion region becomes thick
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365561 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.17\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\). The electron and hole densities are each equal to \(2.5 \times {10^{19}}\;{m^{ - 3}}\). The electrical conductivity of germanium is

1 \(4.24\;S\;{m^{ - 1}}\)
2 \(2.12\;S\;{m^{ - 1}}\)
3 \(1.09\;S\;{m^{ - 1}}\)
4 \(0.47\;S\;{m^{ - 1}}\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365558 In extrinsic semiconductors

1 The conduction band and valence band overlap
2 The gap between conduction band and valence band is near about 16\(eV\)
3 The gap between conduction band and valence band is near about 1\(eV\)
4 The gap between conduction band and valence band will be 100\(eV\) and more
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365559 The valency of impurity element for making \(n\)-type semiconductor is

1 \(3\)
2 \(5\)
3 \(4\)
4 \(7\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365560 If a small amount of antimony is added to germanium crystal

1 The positive terminal of the battery is connected to \(p\)-side and the depletion region becomes thin
2 The antimony becomes an acceptor atom
3 There will be more free electrons than holes in the semiconductor
4 The positive terminal of the battery is connected to \(p\)- side and the depletion region becomes thick
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365561 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.17\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\). The electron and hole densities are each equal to \(2.5 \times {10^{19}}\;{m^{ - 3}}\). The electrical conductivity of germanium is

1 \(4.24\;S\;{m^{ - 1}}\)
2 \(2.12\;S\;{m^{ - 1}}\)
3 \(1.09\;S\;{m^{ - 1}}\)
4 \(0.47\;S\;{m^{ - 1}}\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365558 In extrinsic semiconductors

1 The conduction band and valence band overlap
2 The gap between conduction band and valence band is near about 16\(eV\)
3 The gap between conduction band and valence band is near about 1\(eV\)
4 The gap between conduction band and valence band will be 100\(eV\) and more
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365559 The valency of impurity element for making \(n\)-type semiconductor is

1 \(3\)
2 \(5\)
3 \(4\)
4 \(7\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365560 If a small amount of antimony is added to germanium crystal

1 The positive terminal of the battery is connected to \(p\)-side and the depletion region becomes thin
2 The antimony becomes an acceptor atom
3 There will be more free electrons than holes in the semiconductor
4 The positive terminal of the battery is connected to \(p\)- side and the depletion region becomes thick
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365561 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.17\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\). The electron and hole densities are each equal to \(2.5 \times {10^{19}}\;{m^{ - 3}}\). The electrical conductivity of germanium is

1 \(4.24\;S\;{m^{ - 1}}\)
2 \(2.12\;S\;{m^{ - 1}}\)
3 \(1.09\;S\;{m^{ - 1}}\)
4 \(0.47\;S\;{m^{ - 1}}\)
For More Updates join with Us
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365558 In extrinsic semiconductors

1 The conduction band and valence band overlap
2 The gap between conduction band and valence band is near about 16\(eV\)
3 The gap between conduction band and valence band is near about 1\(eV\)
4 The gap between conduction band and valence band will be 100\(eV\) and more
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365559 The valency of impurity element for making \(n\)-type semiconductor is

1 \(3\)
2 \(5\)
3 \(4\)
4 \(7\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365560 If a small amount of antimony is added to germanium crystal

1 The positive terminal of the battery is connected to \(p\)-side and the depletion region becomes thin
2 The antimony becomes an acceptor atom
3 There will be more free electrons than holes in the semiconductor
4 The positive terminal of the battery is connected to \(p\)- side and the depletion region becomes thick
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365561 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\) and \(0.17\;{m^2}\;{V^{ - 1}}\;{s^{ - 1}}\). The electron and hole densities are each equal to \(2.5 \times {10^{19}}\;{m^{ - 3}}\). The electrical conductivity of germanium is

1 \(4.24\;S\;{m^{ - 1}}\)
2 \(2.12\;S\;{m^{ - 1}}\)
3 \(1.09\;S\;{m^{ - 1}}\)
4 \(0.47\;S\;{m^{ - 1}}\)
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