Types of Semi Conductors
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365614 Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to \({e^{ - \Delta E/2KT}}\). Here \(\Delta E = \) energy gap and \(k = 8.62 \times {10^{ - 5}}eV/kelvin.\) The energy gap for silicon is 1.1\(eV\). The ratio of electron hole pairs at 300\(K\) and 400 \(K\) is:

1 \({e^{ - 5.31}}\)
2 \({e^{ - 5}}\)
3 \(e\)
4 \({e^2}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365615 Fermi level of energy of an intrinsic semiconductor lies

1 In the middle of the forbidden gap
2 Below the middle of forbidden gap
3 Above the middle of forbidden gap
4 Outside the forbidden gap
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365614 Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to \({e^{ - \Delta E/2KT}}\). Here \(\Delta E = \) energy gap and \(k = 8.62 \times {10^{ - 5}}eV/kelvin.\) The energy gap for silicon is 1.1\(eV\). The ratio of electron hole pairs at 300\(K\) and 400 \(K\) is:

1 \({e^{ - 5.31}}\)
2 \({e^{ - 5}}\)
3 \(e\)
4 \({e^2}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365615 Fermi level of energy of an intrinsic semiconductor lies

1 In the middle of the forbidden gap
2 Below the middle of forbidden gap
3 Above the middle of forbidden gap
4 Outside the forbidden gap
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