Types of Semi Conductors
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365609 On increasing temperature, the conductivity of pure semiconductors

1 Decreases
2 Increases
3 Remains unchanged
4 Becomes zero
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365610 The relation between number of free electrons (\(n\)) in a semiconductor and temperature (\(T\)) is given by

1 \(n \propto T\)
2 \(n \propto {T^2}\)
3 \(n \propto \sqrt T \)
4 \(n \propto {T^{3/2}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365611 The value indicated by Fermi energy level in an intrinsic semiconductor is

1 The average energy of electrons and holes
2 The energy of electrons in conduction band
3 The energy of holes in valence band
4 The energy of forbidden region
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365612 A \(Ge\) specimen is doped with \(Al\). The concentration of acceptor atoms is \({10^{21}}\,atoms/{m^3}.\) Given that the intrinsic concentration of electron-hole pairs is \({10^{19}}/{m^3},\) the concentration of electrons in the specimen is

1 \({10^{17}}/{m^3}\)
2 \({10^{15}}/{m^3}\)
3 \({10^4}/{m^3}\)
4 \({10^2}/{m^3}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365613 An intrinsic semiconductor has

1 Equal amounts of negative and positive charges
2 No minority charge carriers
3 No majority charge carriers
4 No free charges
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365609 On increasing temperature, the conductivity of pure semiconductors

1 Decreases
2 Increases
3 Remains unchanged
4 Becomes zero
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365610 The relation between number of free electrons (\(n\)) in a semiconductor and temperature (\(T\)) is given by

1 \(n \propto T\)
2 \(n \propto {T^2}\)
3 \(n \propto \sqrt T \)
4 \(n \propto {T^{3/2}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365611 The value indicated by Fermi energy level in an intrinsic semiconductor is

1 The average energy of electrons and holes
2 The energy of electrons in conduction band
3 The energy of holes in valence band
4 The energy of forbidden region
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365612 A \(Ge\) specimen is doped with \(Al\). The concentration of acceptor atoms is \({10^{21}}\,atoms/{m^3}.\) Given that the intrinsic concentration of electron-hole pairs is \({10^{19}}/{m^3},\) the concentration of electrons in the specimen is

1 \({10^{17}}/{m^3}\)
2 \({10^{15}}/{m^3}\)
3 \({10^4}/{m^3}\)
4 \({10^2}/{m^3}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365613 An intrinsic semiconductor has

1 Equal amounts of negative and positive charges
2 No minority charge carriers
3 No majority charge carriers
4 No free charges
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365609 On increasing temperature, the conductivity of pure semiconductors

1 Decreases
2 Increases
3 Remains unchanged
4 Becomes zero
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365610 The relation between number of free electrons (\(n\)) in a semiconductor and temperature (\(T\)) is given by

1 \(n \propto T\)
2 \(n \propto {T^2}\)
3 \(n \propto \sqrt T \)
4 \(n \propto {T^{3/2}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365611 The value indicated by Fermi energy level in an intrinsic semiconductor is

1 The average energy of electrons and holes
2 The energy of electrons in conduction band
3 The energy of holes in valence band
4 The energy of forbidden region
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365612 A \(Ge\) specimen is doped with \(Al\). The concentration of acceptor atoms is \({10^{21}}\,atoms/{m^3}.\) Given that the intrinsic concentration of electron-hole pairs is \({10^{19}}/{m^3},\) the concentration of electrons in the specimen is

1 \({10^{17}}/{m^3}\)
2 \({10^{15}}/{m^3}\)
3 \({10^4}/{m^3}\)
4 \({10^2}/{m^3}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365613 An intrinsic semiconductor has

1 Equal amounts of negative and positive charges
2 No minority charge carriers
3 No majority charge carriers
4 No free charges
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365609 On increasing temperature, the conductivity of pure semiconductors

1 Decreases
2 Increases
3 Remains unchanged
4 Becomes zero
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365610 The relation between number of free electrons (\(n\)) in a semiconductor and temperature (\(T\)) is given by

1 \(n \propto T\)
2 \(n \propto {T^2}\)
3 \(n \propto \sqrt T \)
4 \(n \propto {T^{3/2}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365611 The value indicated by Fermi energy level in an intrinsic semiconductor is

1 The average energy of electrons and holes
2 The energy of electrons in conduction band
3 The energy of holes in valence band
4 The energy of forbidden region
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365612 A \(Ge\) specimen is doped with \(Al\). The concentration of acceptor atoms is \({10^{21}}\,atoms/{m^3}.\) Given that the intrinsic concentration of electron-hole pairs is \({10^{19}}/{m^3},\) the concentration of electrons in the specimen is

1 \({10^{17}}/{m^3}\)
2 \({10^{15}}/{m^3}\)
3 \({10^4}/{m^3}\)
4 \({10^2}/{m^3}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365613 An intrinsic semiconductor has

1 Equal amounts of negative and positive charges
2 No minority charge carriers
3 No majority charge carriers
4 No free charges
NEET DIGITAL LIBRARY
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365609 On increasing temperature, the conductivity of pure semiconductors

1 Decreases
2 Increases
3 Remains unchanged
4 Becomes zero
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365610 The relation between number of free electrons (\(n\)) in a semiconductor and temperature (\(T\)) is given by

1 \(n \propto T\)
2 \(n \propto {T^2}\)
3 \(n \propto \sqrt T \)
4 \(n \propto {T^{3/2}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365611 The value indicated by Fermi energy level in an intrinsic semiconductor is

1 The average energy of electrons and holes
2 The energy of electrons in conduction band
3 The energy of holes in valence band
4 The energy of forbidden region
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365612 A \(Ge\) specimen is doped with \(Al\). The concentration of acceptor atoms is \({10^{21}}\,atoms/{m^3}.\) Given that the intrinsic concentration of electron-hole pairs is \({10^{19}}/{m^3},\) the concentration of electrons in the specimen is

1 \({10^{17}}/{m^3}\)
2 \({10^{15}}/{m^3}\)
3 \({10^4}/{m^3}\)
4 \({10^2}/{m^3}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365613 An intrinsic semiconductor has

1 Equal amounts of negative and positive charges
2 No minority charge carriers
3 No majority charge carriers
4 No free charges