Transistors
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365490 In common emitter amplifier, the current gain is 62. The collector resistance and input resistance are \(5\,k\Omega \) an \(500\,\Omega \) respectively. If the input voltage is \(0.01\;V\), the output voltage is

1 \(0.62\,V\)
2 \(6.2\,V\)
3 \(62\,V\)
4 \(620\,V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365491 Assertion :
Base in a transistor is made very thin as compared to collector and emitter regions.
Reason :
Due to thin base, good power gain and voltage gain are obtained by the transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365492 Assertion :
Transistor can be used as a switch.
Reason :
Both linear and non-linear voltage bais dependance occurs in transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365493 The minimum potential difference between the base and emitter required to switch a silicon transistor \(O N\) is approximately

1 \(1\;V\)
2 \(3\;V\)
3 \(5\;V\)
4 \(4.2\;V\)
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365494 A common emitter amplifier has a voltage gain of 50 \(m\), an input impedance of \(100\,\Omega \) and an output impedance of \(200\,\Omega \). The power gain of the amplifier is

1 \(1250\)
2 \(1000\)
3 \(500\)
4 \(50\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365490 In common emitter amplifier, the current gain is 62. The collector resistance and input resistance are \(5\,k\Omega \) an \(500\,\Omega \) respectively. If the input voltage is \(0.01\;V\), the output voltage is

1 \(0.62\,V\)
2 \(6.2\,V\)
3 \(62\,V\)
4 \(620\,V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365491 Assertion :
Base in a transistor is made very thin as compared to collector and emitter regions.
Reason :
Due to thin base, good power gain and voltage gain are obtained by the transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365492 Assertion :
Transistor can be used as a switch.
Reason :
Both linear and non-linear voltage bais dependance occurs in transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365493 The minimum potential difference between the base and emitter required to switch a silicon transistor \(O N\) is approximately

1 \(1\;V\)
2 \(3\;V\)
3 \(5\;V\)
4 \(4.2\;V\)
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365494 A common emitter amplifier has a voltage gain of 50 \(m\), an input impedance of \(100\,\Omega \) and an output impedance of \(200\,\Omega \). The power gain of the amplifier is

1 \(1250\)
2 \(1000\)
3 \(500\)
4 \(50\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365490 In common emitter amplifier, the current gain is 62. The collector resistance and input resistance are \(5\,k\Omega \) an \(500\,\Omega \) respectively. If the input voltage is \(0.01\;V\), the output voltage is

1 \(0.62\,V\)
2 \(6.2\,V\)
3 \(62\,V\)
4 \(620\,V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365491 Assertion :
Base in a transistor is made very thin as compared to collector and emitter regions.
Reason :
Due to thin base, good power gain and voltage gain are obtained by the transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365492 Assertion :
Transistor can be used as a switch.
Reason :
Both linear and non-linear voltage bais dependance occurs in transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365493 The minimum potential difference between the base and emitter required to switch a silicon transistor \(O N\) is approximately

1 \(1\;V\)
2 \(3\;V\)
3 \(5\;V\)
4 \(4.2\;V\)
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365494 A common emitter amplifier has a voltage gain of 50 \(m\), an input impedance of \(100\,\Omega \) and an output impedance of \(200\,\Omega \). The power gain of the amplifier is

1 \(1250\)
2 \(1000\)
3 \(500\)
4 \(50\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365490 In common emitter amplifier, the current gain is 62. The collector resistance and input resistance are \(5\,k\Omega \) an \(500\,\Omega \) respectively. If the input voltage is \(0.01\;V\), the output voltage is

1 \(0.62\,V\)
2 \(6.2\,V\)
3 \(62\,V\)
4 \(620\,V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365491 Assertion :
Base in a transistor is made very thin as compared to collector and emitter regions.
Reason :
Due to thin base, good power gain and voltage gain are obtained by the transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365492 Assertion :
Transistor can be used as a switch.
Reason :
Both linear and non-linear voltage bais dependance occurs in transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365493 The minimum potential difference between the base and emitter required to switch a silicon transistor \(O N\) is approximately

1 \(1\;V\)
2 \(3\;V\)
3 \(5\;V\)
4 \(4.2\;V\)
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365494 A common emitter amplifier has a voltage gain of 50 \(m\), an input impedance of \(100\,\Omega \) and an output impedance of \(200\,\Omega \). The power gain of the amplifier is

1 \(1250\)
2 \(1000\)
3 \(500\)
4 \(50\)
Join With Us for More Updates
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365490 In common emitter amplifier, the current gain is 62. The collector resistance and input resistance are \(5\,k\Omega \) an \(500\,\Omega \) respectively. If the input voltage is \(0.01\;V\), the output voltage is

1 \(0.62\,V\)
2 \(6.2\,V\)
3 \(62\,V\)
4 \(620\,V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365491 Assertion :
Base in a transistor is made very thin as compared to collector and emitter regions.
Reason :
Due to thin base, good power gain and voltage gain are obtained by the transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365492 Assertion :
Transistor can be used as a switch.
Reason :
Both linear and non-linear voltage bais dependance occurs in transistor.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365493 The minimum potential difference between the base and emitter required to switch a silicon transistor \(O N\) is approximately

1 \(1\;V\)
2 \(3\;V\)
3 \(5\;V\)
4 \(4.2\;V\)
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365494 A common emitter amplifier has a voltage gain of 50 \(m\), an input impedance of \(100\,\Omega \) and an output impedance of \(200\,\Omega \). The power gain of the amplifier is

1 \(1250\)
2 \(1000\)
3 \(500\)
4 \(50\)