Transistors
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365477 The input resistance of a transistor used in its common emitter configuration is

1 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_b}}}} \right)_{{V_{ce}}}}\)
2 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_b}}}} \right)_{{V_{be}}}}\)
3 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_c}}}} \right)_{{V_{ce}}}}\)
4 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_c}}}} \right)_{{V_{be}}}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365478 The current gain of transistor in common emitter mode is 49 . The change in collector current and emitter currect corresponding to change in base current by \(5.0\,\mu A\), will be

1 \(245\,\mu A\,\,{\rm{and}}\,\,250\,\mu A\)
2 \(240\,\mu A\,\,{\rm{and}}\,\,235\,\mu A\)
3 \(260\,\mu A\,\,{\rm{and}}\,\,255\,\mu A\)
4 None of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365479 If \(\beta ,{R_L}\) and \(r\) are the \(AC\) current gain, load resistance and the input resistance of a transistor, respectively in \(CE\) configuration, the voltage and the power gains respectively are

1 \(\beta \frac{{{R_L}}}{r}\) and \({\beta ^2}\frac{{{R_L}}}{r}\)
2 \(\beta \frac{r}{{{R_L}}}\) and \({\beta ^2}\frac{r}{{{R_L}}}\)
3 \(\beta \frac{{{R_L}}}{r}\) and \(\beta {\left( {\frac{{{R_L}}}{r}} \right)^2}\)
4 \(\beta \frac{r}{{{R_L}}}\) and \(\beta {\left( {\frac{r}{{{R_L}}}} \right)^2}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365480 For CE configuration \(n-p-n\) transistor. Which of the following statement is correct?

1 \(I_{C}=I_{E}+I_{B}\)
2 \(I_{B}=I_{E}+I_{C}\)
3 \(I_{E}=I_{C}+I_{B}\)
4 All of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365481 A \(p-n-p\) transistor having \(AC\) current gain of 50 is used to make an amplifier of a voltage gain of 5 . What will be the power gain of the amplifier?

1 125
2 178
3 250
4 354
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365477 The input resistance of a transistor used in its common emitter configuration is

1 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_b}}}} \right)_{{V_{ce}}}}\)
2 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_b}}}} \right)_{{V_{be}}}}\)
3 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_c}}}} \right)_{{V_{ce}}}}\)
4 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_c}}}} \right)_{{V_{be}}}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365478 The current gain of transistor in common emitter mode is 49 . The change in collector current and emitter currect corresponding to change in base current by \(5.0\,\mu A\), will be

1 \(245\,\mu A\,\,{\rm{and}}\,\,250\,\mu A\)
2 \(240\,\mu A\,\,{\rm{and}}\,\,235\,\mu A\)
3 \(260\,\mu A\,\,{\rm{and}}\,\,255\,\mu A\)
4 None of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365479 If \(\beta ,{R_L}\) and \(r\) are the \(AC\) current gain, load resistance and the input resistance of a transistor, respectively in \(CE\) configuration, the voltage and the power gains respectively are

1 \(\beta \frac{{{R_L}}}{r}\) and \({\beta ^2}\frac{{{R_L}}}{r}\)
2 \(\beta \frac{r}{{{R_L}}}\) and \({\beta ^2}\frac{r}{{{R_L}}}\)
3 \(\beta \frac{{{R_L}}}{r}\) and \(\beta {\left( {\frac{{{R_L}}}{r}} \right)^2}\)
4 \(\beta \frac{r}{{{R_L}}}\) and \(\beta {\left( {\frac{r}{{{R_L}}}} \right)^2}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365480 For CE configuration \(n-p-n\) transistor. Which of the following statement is correct?

1 \(I_{C}=I_{E}+I_{B}\)
2 \(I_{B}=I_{E}+I_{C}\)
3 \(I_{E}=I_{C}+I_{B}\)
4 All of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365481 A \(p-n-p\) transistor having \(AC\) current gain of 50 is used to make an amplifier of a voltage gain of 5 . What will be the power gain of the amplifier?

1 125
2 178
3 250
4 354
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365477 The input resistance of a transistor used in its common emitter configuration is

1 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_b}}}} \right)_{{V_{ce}}}}\)
2 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_b}}}} \right)_{{V_{be}}}}\)
3 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_c}}}} \right)_{{V_{ce}}}}\)
4 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_c}}}} \right)_{{V_{be}}}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365478 The current gain of transistor in common emitter mode is 49 . The change in collector current and emitter currect corresponding to change in base current by \(5.0\,\mu A\), will be

1 \(245\,\mu A\,\,{\rm{and}}\,\,250\,\mu A\)
2 \(240\,\mu A\,\,{\rm{and}}\,\,235\,\mu A\)
3 \(260\,\mu A\,\,{\rm{and}}\,\,255\,\mu A\)
4 None of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365479 If \(\beta ,{R_L}\) and \(r\) are the \(AC\) current gain, load resistance and the input resistance of a transistor, respectively in \(CE\) configuration, the voltage and the power gains respectively are

1 \(\beta \frac{{{R_L}}}{r}\) and \({\beta ^2}\frac{{{R_L}}}{r}\)
2 \(\beta \frac{r}{{{R_L}}}\) and \({\beta ^2}\frac{r}{{{R_L}}}\)
3 \(\beta \frac{{{R_L}}}{r}\) and \(\beta {\left( {\frac{{{R_L}}}{r}} \right)^2}\)
4 \(\beta \frac{r}{{{R_L}}}\) and \(\beta {\left( {\frac{r}{{{R_L}}}} \right)^2}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365480 For CE configuration \(n-p-n\) transistor. Which of the following statement is correct?

1 \(I_{C}=I_{E}+I_{B}\)
2 \(I_{B}=I_{E}+I_{C}\)
3 \(I_{E}=I_{C}+I_{B}\)
4 All of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365481 A \(p-n-p\) transistor having \(AC\) current gain of 50 is used to make an amplifier of a voltage gain of 5 . What will be the power gain of the amplifier?

1 125
2 178
3 250
4 354
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365477 The input resistance of a transistor used in its common emitter configuration is

1 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_b}}}} \right)_{{V_{ce}}}}\)
2 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_b}}}} \right)_{{V_{be}}}}\)
3 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_c}}}} \right)_{{V_{ce}}}}\)
4 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_c}}}} \right)_{{V_{be}}}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365478 The current gain of transistor in common emitter mode is 49 . The change in collector current and emitter currect corresponding to change in base current by \(5.0\,\mu A\), will be

1 \(245\,\mu A\,\,{\rm{and}}\,\,250\,\mu A\)
2 \(240\,\mu A\,\,{\rm{and}}\,\,235\,\mu A\)
3 \(260\,\mu A\,\,{\rm{and}}\,\,255\,\mu A\)
4 None of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365479 If \(\beta ,{R_L}\) and \(r\) are the \(AC\) current gain, load resistance and the input resistance of a transistor, respectively in \(CE\) configuration, the voltage and the power gains respectively are

1 \(\beta \frac{{{R_L}}}{r}\) and \({\beta ^2}\frac{{{R_L}}}{r}\)
2 \(\beta \frac{r}{{{R_L}}}\) and \({\beta ^2}\frac{r}{{{R_L}}}\)
3 \(\beta \frac{{{R_L}}}{r}\) and \(\beta {\left( {\frac{{{R_L}}}{r}} \right)^2}\)
4 \(\beta \frac{r}{{{R_L}}}\) and \(\beta {\left( {\frac{r}{{{R_L}}}} \right)^2}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365480 For CE configuration \(n-p-n\) transistor. Which of the following statement is correct?

1 \(I_{C}=I_{E}+I_{B}\)
2 \(I_{B}=I_{E}+I_{C}\)
3 \(I_{E}=I_{C}+I_{B}\)
4 All of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365481 A \(p-n-p\) transistor having \(AC\) current gain of 50 is used to make an amplifier of a voltage gain of 5 . What will be the power gain of the amplifier?

1 125
2 178
3 250
4 354
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365477 The input resistance of a transistor used in its common emitter configuration is

1 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_b}}}} \right)_{{V_{ce}}}}\)
2 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_b}}}} \right)_{{V_{be}}}}\)
3 \({R_{in}} = {\left( {\frac{{\Delta {V_{be}}}}{{\Delta {I_c}}}} \right)_{{V_{ce}}}}\)
4 \({R_{in}} = {\left( {\frac{{\Delta {V_{ce}}}}{{\Delta {I_c}}}} \right)_{{V_{be}}}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365478 The current gain of transistor in common emitter mode is 49 . The change in collector current and emitter currect corresponding to change in base current by \(5.0\,\mu A\), will be

1 \(245\,\mu A\,\,{\rm{and}}\,\,250\,\mu A\)
2 \(240\,\mu A\,\,{\rm{and}}\,\,235\,\mu A\)
3 \(260\,\mu A\,\,{\rm{and}}\,\,255\,\mu A\)
4 None of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365479 If \(\beta ,{R_L}\) and \(r\) are the \(AC\) current gain, load resistance and the input resistance of a transistor, respectively in \(CE\) configuration, the voltage and the power gains respectively are

1 \(\beta \frac{{{R_L}}}{r}\) and \({\beta ^2}\frac{{{R_L}}}{r}\)
2 \(\beta \frac{r}{{{R_L}}}\) and \({\beta ^2}\frac{r}{{{R_L}}}\)
3 \(\beta \frac{{{R_L}}}{r}\) and \(\beta {\left( {\frac{{{R_L}}}{r}} \right)^2}\)
4 \(\beta \frac{r}{{{R_L}}}\) and \(\beta {\left( {\frac{r}{{{R_L}}}} \right)^2}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365480 For CE configuration \(n-p-n\) transistor. Which of the following statement is correct?

1 \(I_{C}=I_{E}+I_{B}\)
2 \(I_{B}=I_{E}+I_{C}\)
3 \(I_{E}=I_{C}+I_{B}\)
4 All of these
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365481 A \(p-n-p\) transistor having \(AC\) current gain of 50 is used to make an amplifier of a voltage gain of 5 . What will be the power gain of the amplifier?

1 125
2 178
3 250
4 354