PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365456
In a transistor the base is made very thin and is lightly doped with an impurity because
1 To enable the collector to collect about 95% of the holes or electrons coming from the emitter side
2 To enable the emitter to emit small number of holes or electrons
3 To save the transistors from high current effects
4 To enable the base to collect about 95% of holes or electrons coming from the emitter side
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365457
Assertion : In a transistor the base is made thin. Reason : The stability of transistor does not depend on power.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
In a transistor, a thin and lightly doped base allows a small dfraction of holes to combine with electrons, ensuring efficient electron flow to the collector, increasing transistor power. So correct option is (3).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365458
The Ratio (\(R\)) of output resistance \({r_o}\), and the input resistance \({r_i}\) in measurements of input and output characteristics of a transistor is typically in the range:
1 \(R \sim {10^2} - {10^3}\)
2 \(R \sim 1 - 10\)
3 \(R \sim 0.1 - 1.0\)
4 \(R \sim 0.01 - 0.1\)
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365459
The part of a transistor which is heavily doped to produce large number of majority carriers is :
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365456
In a transistor the base is made very thin and is lightly doped with an impurity because
1 To enable the collector to collect about 95% of the holes or electrons coming from the emitter side
2 To enable the emitter to emit small number of holes or electrons
3 To save the transistors from high current effects
4 To enable the base to collect about 95% of holes or electrons coming from the emitter side
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365457
Assertion : In a transistor the base is made thin. Reason : The stability of transistor does not depend on power.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
In a transistor, a thin and lightly doped base allows a small dfraction of holes to combine with electrons, ensuring efficient electron flow to the collector, increasing transistor power. So correct option is (3).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365458
The Ratio (\(R\)) of output resistance \({r_o}\), and the input resistance \({r_i}\) in measurements of input and output characteristics of a transistor is typically in the range:
1 \(R \sim {10^2} - {10^3}\)
2 \(R \sim 1 - 10\)
3 \(R \sim 0.1 - 1.0\)
4 \(R \sim 0.01 - 0.1\)
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365459
The part of a transistor which is heavily doped to produce large number of majority carriers is :
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365456
In a transistor the base is made very thin and is lightly doped with an impurity because
1 To enable the collector to collect about 95% of the holes or electrons coming from the emitter side
2 To enable the emitter to emit small number of holes or electrons
3 To save the transistors from high current effects
4 To enable the base to collect about 95% of holes or electrons coming from the emitter side
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365457
Assertion : In a transistor the base is made thin. Reason : The stability of transistor does not depend on power.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
In a transistor, a thin and lightly doped base allows a small dfraction of holes to combine with electrons, ensuring efficient electron flow to the collector, increasing transistor power. So correct option is (3).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365458
The Ratio (\(R\)) of output resistance \({r_o}\), and the input resistance \({r_i}\) in measurements of input and output characteristics of a transistor is typically in the range:
1 \(R \sim {10^2} - {10^3}\)
2 \(R \sim 1 - 10\)
3 \(R \sim 0.1 - 1.0\)
4 \(R \sim 0.01 - 0.1\)
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365459
The part of a transistor which is heavily doped to produce large number of majority carriers is :
NEET Test Series from KOTA - 10 Papers In MS WORD
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365456
In a transistor the base is made very thin and is lightly doped with an impurity because
1 To enable the collector to collect about 95% of the holes or electrons coming from the emitter side
2 To enable the emitter to emit small number of holes or electrons
3 To save the transistors from high current effects
4 To enable the base to collect about 95% of holes or electrons coming from the emitter side
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365457
Assertion : In a transistor the base is made thin. Reason : The stability of transistor does not depend on power.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
In a transistor, a thin and lightly doped base allows a small dfraction of holes to combine with electrons, ensuring efficient electron flow to the collector, increasing transistor power. So correct option is (3).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365458
The Ratio (\(R\)) of output resistance \({r_o}\), and the input resistance \({r_i}\) in measurements of input and output characteristics of a transistor is typically in the range:
1 \(R \sim {10^2} - {10^3}\)
2 \(R \sim 1 - 10\)
3 \(R \sim 0.1 - 1.0\)
4 \(R \sim 0.01 - 0.1\)
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365459
The part of a transistor which is heavily doped to produce large number of majority carriers is :
