PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365452
For transistor action, which of the following statements is correct
1 Base, emitter and collector regions should have same size.
2 Both emitter junction as well as the collector junction are forward biased.
3 The base region must be very thin and lightly doped.
4 Base, emitter and collector regions should have same doping concentrations
Explanation:
Base region is very thin and lightly doped.
NEET - 2020
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365453
In a junction transistor the emitter, base and collector are made of
1 Extrinsic semiconductors
2 Intrinsic semiconductors
3 Both 1 and 2
4 Metal
Explanation:
As junction transistor is a semiconductor and is doped by a specific impurity which is able to modify its electrical properties.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365454
In a transistor
1 Both emitter and the collector are equally doped
2 Base is more heavily doped than collector
3 Collector is more heavily doped than the emitter
4 The base is made very thin and is lightly doped
Explanation:
In transistor bases are lightly dopped and very thin, it passes most of the emitter-injected electrons on to the collector. The dopping level of collector is intermediate between the heavy doping of emitter and light doping of base.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365455
Match the following Column I Column II A Moderate size and heavily doped P Base B Very thin and lightly doped Q Collector C Moderately doped and of large size R Emitter D Doped with penta valent impurity S \(N\)-type semi - conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365452
For transistor action, which of the following statements is correct
1 Base, emitter and collector regions should have same size.
2 Both emitter junction as well as the collector junction are forward biased.
3 The base region must be very thin and lightly doped.
4 Base, emitter and collector regions should have same doping concentrations
Explanation:
Base region is very thin and lightly doped.
NEET - 2020
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365453
In a junction transistor the emitter, base and collector are made of
1 Extrinsic semiconductors
2 Intrinsic semiconductors
3 Both 1 and 2
4 Metal
Explanation:
As junction transistor is a semiconductor and is doped by a specific impurity which is able to modify its electrical properties.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365454
In a transistor
1 Both emitter and the collector are equally doped
2 Base is more heavily doped than collector
3 Collector is more heavily doped than the emitter
4 The base is made very thin and is lightly doped
Explanation:
In transistor bases are lightly dopped and very thin, it passes most of the emitter-injected electrons on to the collector. The dopping level of collector is intermediate between the heavy doping of emitter and light doping of base.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365455
Match the following Column I Column II A Moderate size and heavily doped P Base B Very thin and lightly doped Q Collector C Moderately doped and of large size R Emitter D Doped with penta valent impurity S \(N\)-type semi - conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365452
For transistor action, which of the following statements is correct
1 Base, emitter and collector regions should have same size.
2 Both emitter junction as well as the collector junction are forward biased.
3 The base region must be very thin and lightly doped.
4 Base, emitter and collector regions should have same doping concentrations
Explanation:
Base region is very thin and lightly doped.
NEET - 2020
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365453
In a junction transistor the emitter, base and collector are made of
1 Extrinsic semiconductors
2 Intrinsic semiconductors
3 Both 1 and 2
4 Metal
Explanation:
As junction transistor is a semiconductor and is doped by a specific impurity which is able to modify its electrical properties.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365454
In a transistor
1 Both emitter and the collector are equally doped
2 Base is more heavily doped than collector
3 Collector is more heavily doped than the emitter
4 The base is made very thin and is lightly doped
Explanation:
In transistor bases are lightly dopped and very thin, it passes most of the emitter-injected electrons on to the collector. The dopping level of collector is intermediate between the heavy doping of emitter and light doping of base.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365455
Match the following Column I Column II A Moderate size and heavily doped P Base B Very thin and lightly doped Q Collector C Moderately doped and of large size R Emitter D Doped with penta valent impurity S \(N\)-type semi - conductor
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365452
For transistor action, which of the following statements is correct
1 Base, emitter and collector regions should have same size.
2 Both emitter junction as well as the collector junction are forward biased.
3 The base region must be very thin and lightly doped.
4 Base, emitter and collector regions should have same doping concentrations
Explanation:
Base region is very thin and lightly doped.
NEET - 2020
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365453
In a junction transistor the emitter, base and collector are made of
1 Extrinsic semiconductors
2 Intrinsic semiconductors
3 Both 1 and 2
4 Metal
Explanation:
As junction transistor is a semiconductor and is doped by a specific impurity which is able to modify its electrical properties.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365454
In a transistor
1 Both emitter and the collector are equally doped
2 Base is more heavily doped than collector
3 Collector is more heavily doped than the emitter
4 The base is made very thin and is lightly doped
Explanation:
In transistor bases are lightly dopped and very thin, it passes most of the emitter-injected electrons on to the collector. The dopping level of collector is intermediate between the heavy doping of emitter and light doping of base.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365455
Match the following Column I Column II A Moderate size and heavily doped P Base B Very thin and lightly doped Q Collector C Moderately doped and of large size R Emitter D Doped with penta valent impurity S \(N\)-type semi - conductor
