365437 The \(I-V\) characteristics of an electronic device shown in the figure. The device is

365438 Which one of the following statement is not correct in the case of light emitting diodes?
(A) It is a heavily doped \(p-n\) junction.
(B) It emits light only when it is forward biased.
(C) It emits light only when it is reverse biased.
(D) The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below:

365439 Assertion :
A \(pn\) junction with reverse bias can be used as a photodiode to measure light intensity.
Reason :
In a reverse bias condition, the current is small but it is more sensitive to change in incident light intensity.

365440 Figure shows reverse bias current, under different illumination intensities \({I_{1,}}\;{I_2}\) and \({I_3}\) for a given photodiode. Predict the correct order of intensities

365437 The \(I-V\) characteristics of an electronic device shown in the figure. The device is

365438 Which one of the following statement is not correct in the case of light emitting diodes?
(A) It is a heavily doped \(p-n\) junction.
(B) It emits light only when it is forward biased.
(C) It emits light only when it is reverse biased.
(D) The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below:

365439 Assertion :
A \(pn\) junction with reverse bias can be used as a photodiode to measure light intensity.
Reason :
In a reverse bias condition, the current is small but it is more sensitive to change in incident light intensity.

365440 Figure shows reverse bias current, under different illumination intensities \({I_{1,}}\;{I_2}\) and \({I_3}\) for a given photodiode. Predict the correct order of intensities

365437 The \(I-V\) characteristics of an electronic device shown in the figure. The device is

365438 Which one of the following statement is not correct in the case of light emitting diodes?
(A) It is a heavily doped \(p-n\) junction.
(B) It emits light only when it is forward biased.
(C) It emits light only when it is reverse biased.
(D) The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below:

365439 Assertion :
A \(pn\) junction with reverse bias can be used as a photodiode to measure light intensity.
Reason :
In a reverse bias condition, the current is small but it is more sensitive to change in incident light intensity.

365440 Figure shows reverse bias current, under different illumination intensities \({I_{1,}}\;{I_2}\) and \({I_3}\) for a given photodiode. Predict the correct order of intensities

365437 The \(I-V\) characteristics of an electronic device shown in the figure. The device is

365438 Which one of the following statement is not correct in the case of light emitting diodes?
(A) It is a heavily doped \(p-n\) junction.
(B) It emits light only when it is forward biased.
(C) It emits light only when it is reverse biased.
(D) The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below:

365439 Assertion :
A \(pn\) junction with reverse bias can be used as a photodiode to measure light intensity.
Reason :
In a reverse bias condition, the current is small but it is more sensitive to change in incident light intensity.

365440 Figure shows reverse bias current, under different illumination intensities \({I_{1,}}\;{I_2}\) and \({I_3}\) for a given photodiode. Predict the correct order of intensities