Semiconductor Diode
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365337 Consider the following statements I and II and identify the correct choice of the given answers.
I.
The width of the depletion layer in a \(p\)-\(n\) junction diode increases in forward biased.
II.
In an intrinsic semiconductor, the fermi energy level is exactly in the middle of the forbidden energy gap.

1 I is true and II is false
2 Both I and II are false
3 I is false and II is true
4 Both I and II are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365338 \({V_A}\,\) and \(\,{V_B}\) denote potentials of \(A\) and \(B\), then the equivalent resistance between \(A\) and \(B\) in the adjoining circuit is
supporting img

1 \(5\Omega \,\,{\rm{if}}\,\,{V_A} > {V_B}\)
2 \(30\Omega \,\,{\rm{if}}\,\,{V_A} < {V_B}\)
3 \({\rm{Both}}\,{\rm{(1)}}\,{\rm{and}}\,{\rm{(2)}}\,\)
4 \({\rm{Neither (1) nor (2)}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365339 On increasing reverse voltage in a \(p\)-\(n\) junction diode the value of reverse current will

1 Gradually increase
2 First remain constant and then suddenly increase
3 Remain constant
4 Gradually decrease
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365340 A \(p\) - \(n\) junction diode has breakdown voltage of 28\(V\). If applied external voltage in reverse bias is 40\(V\) the current through it is

1 Zero
2 Infinite
3 10\(A\)
4 15\(A\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365337 Consider the following statements I and II and identify the correct choice of the given answers.
I.
The width of the depletion layer in a \(p\)-\(n\) junction diode increases in forward biased.
II.
In an intrinsic semiconductor, the fermi energy level is exactly in the middle of the forbidden energy gap.

1 I is true and II is false
2 Both I and II are false
3 I is false and II is true
4 Both I and II are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365338 \({V_A}\,\) and \(\,{V_B}\) denote potentials of \(A\) and \(B\), then the equivalent resistance between \(A\) and \(B\) in the adjoining circuit is
supporting img

1 \(5\Omega \,\,{\rm{if}}\,\,{V_A} > {V_B}\)
2 \(30\Omega \,\,{\rm{if}}\,\,{V_A} < {V_B}\)
3 \({\rm{Both}}\,{\rm{(1)}}\,{\rm{and}}\,{\rm{(2)}}\,\)
4 \({\rm{Neither (1) nor (2)}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365339 On increasing reverse voltage in a \(p\)-\(n\) junction diode the value of reverse current will

1 Gradually increase
2 First remain constant and then suddenly increase
3 Remain constant
4 Gradually decrease
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365340 A \(p\) - \(n\) junction diode has breakdown voltage of 28\(V\). If applied external voltage in reverse bias is 40\(V\) the current through it is

1 Zero
2 Infinite
3 10\(A\)
4 15\(A\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365337 Consider the following statements I and II and identify the correct choice of the given answers.
I.
The width of the depletion layer in a \(p\)-\(n\) junction diode increases in forward biased.
II.
In an intrinsic semiconductor, the fermi energy level is exactly in the middle of the forbidden energy gap.

1 I is true and II is false
2 Both I and II are false
3 I is false and II is true
4 Both I and II are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365338 \({V_A}\,\) and \(\,{V_B}\) denote potentials of \(A\) and \(B\), then the equivalent resistance between \(A\) and \(B\) in the adjoining circuit is
supporting img

1 \(5\Omega \,\,{\rm{if}}\,\,{V_A} > {V_B}\)
2 \(30\Omega \,\,{\rm{if}}\,\,{V_A} < {V_B}\)
3 \({\rm{Both}}\,{\rm{(1)}}\,{\rm{and}}\,{\rm{(2)}}\,\)
4 \({\rm{Neither (1) nor (2)}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365339 On increasing reverse voltage in a \(p\)-\(n\) junction diode the value of reverse current will

1 Gradually increase
2 First remain constant and then suddenly increase
3 Remain constant
4 Gradually decrease
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365340 A \(p\) - \(n\) junction diode has breakdown voltage of 28\(V\). If applied external voltage in reverse bias is 40\(V\) the current through it is

1 Zero
2 Infinite
3 10\(A\)
4 15\(A\)
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365337 Consider the following statements I and II and identify the correct choice of the given answers.
I.
The width of the depletion layer in a \(p\)-\(n\) junction diode increases in forward biased.
II.
In an intrinsic semiconductor, the fermi energy level is exactly in the middle of the forbidden energy gap.

1 I is true and II is false
2 Both I and II are false
3 I is false and II is true
4 Both I and II are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365338 \({V_A}\,\) and \(\,{V_B}\) denote potentials of \(A\) and \(B\), then the equivalent resistance between \(A\) and \(B\) in the adjoining circuit is
supporting img

1 \(5\Omega \,\,{\rm{if}}\,\,{V_A} > {V_B}\)
2 \(30\Omega \,\,{\rm{if}}\,\,{V_A} < {V_B}\)
3 \({\rm{Both}}\,{\rm{(1)}}\,{\rm{and}}\,{\rm{(2)}}\,\)
4 \({\rm{Neither (1) nor (2)}}\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365339 On increasing reverse voltage in a \(p\)-\(n\) junction diode the value of reverse current will

1 Gradually increase
2 First remain constant and then suddenly increase
3 Remain constant
4 Gradually decrease
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365340 A \(p\) - \(n\) junction diode has breakdown voltage of 28\(V\). If applied external voltage in reverse bias is 40\(V\) the current through it is

1 Zero
2 Infinite
3 10\(A\)
4 15\(A\)
For More Updates join with Us
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