Semiconductor Diode
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365299 When \(p\)-\(n\) junction is foward biased, the current across the junction is mainly due to

1 Diffusion of charges
2 Drifting of charges
3 Both diffusion and drifting of charges
4 Holes only
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365300 Diode is forward biased and the applied voltage is greater than the potential barrier then
I) resistance of the junction in the forward bias decreases
II) potential barrier remains same
III) width of barrier decreases
IV) \(p\)-type is connected to (-)\(ve\) terminal

1 All are true
2 All are false
3 I, III, IV are true
4 I,II, III are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365301 Assertion :
The dominant mechanism for motion of charge cariers in forward and reverse biased silicon \(pn\) junction is drift in both forward and reverse bias.
Reason :
In reverse biasing, no current flows through the junction.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365302 The increase in the width of the depletion region in a \(p\)-\(n\) junction diode is due to

1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365299 When \(p\)-\(n\) junction is foward biased, the current across the junction is mainly due to

1 Diffusion of charges
2 Drifting of charges
3 Both diffusion and drifting of charges
4 Holes only
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365300 Diode is forward biased and the applied voltage is greater than the potential barrier then
I) resistance of the junction in the forward bias decreases
II) potential barrier remains same
III) width of barrier decreases
IV) \(p\)-type is connected to (-)\(ve\) terminal

1 All are true
2 All are false
3 I, III, IV are true
4 I,II, III are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365301 Assertion :
The dominant mechanism for motion of charge cariers in forward and reverse biased silicon \(pn\) junction is drift in both forward and reverse bias.
Reason :
In reverse biasing, no current flows through the junction.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365302 The increase in the width of the depletion region in a \(p\)-\(n\) junction diode is due to

1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
NEET - 2020
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365299 When \(p\)-\(n\) junction is foward biased, the current across the junction is mainly due to

1 Diffusion of charges
2 Drifting of charges
3 Both diffusion and drifting of charges
4 Holes only
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365300 Diode is forward biased and the applied voltage is greater than the potential barrier then
I) resistance of the junction in the forward bias decreases
II) potential barrier remains same
III) width of barrier decreases
IV) \(p\)-type is connected to (-)\(ve\) terminal

1 All are true
2 All are false
3 I, III, IV are true
4 I,II, III are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365301 Assertion :
The dominant mechanism for motion of charge cariers in forward and reverse biased silicon \(pn\) junction is drift in both forward and reverse bias.
Reason :
In reverse biasing, no current flows through the junction.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365302 The increase in the width of the depletion region in a \(p\)-\(n\) junction diode is due to

1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
NEET - 2020
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PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365299 When \(p\)-\(n\) junction is foward biased, the current across the junction is mainly due to

1 Diffusion of charges
2 Drifting of charges
3 Both diffusion and drifting of charges
4 Holes only
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365300 Diode is forward biased and the applied voltage is greater than the potential barrier then
I) resistance of the junction in the forward bias decreases
II) potential barrier remains same
III) width of barrier decreases
IV) \(p\)-type is connected to (-)\(ve\) terminal

1 All are true
2 All are false
3 I, III, IV are true
4 I,II, III are true
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365301 Assertion :
The dominant mechanism for motion of charge cariers in forward and reverse biased silicon \(pn\) junction is drift in both forward and reverse bias.
Reason :
In reverse biasing, no current flows through the junction.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365302 The increase in the width of the depletion region in a \(p\)-\(n\) junction diode is due to

1 Reverse bias only
2 Both forward bias and reverse bias
3 Increase in forward current
4 Forward bias only
NEET - 2020