365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is
365282
Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.
365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is
365282
Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.
365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is
365282
Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.
365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is
365282
Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.
365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is
365282
Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.