Semiconductor Diode
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is

1 \(1.14\,mA\)
2 \(1\,mA\)
3 \(1\,A\)
4 \(1.14\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365282 Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
supporting img
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365283 Potential drop across forward junction \(p-n\) diode is \(0.7\,V\). If a battery of \(4\,V\) is applied, calculate the resistance to be put in series, if the maximum current in the circuit is \(5\,mA\).

1 \(660\,\Omega \)
2 \(350\,\Omega \)
3 \(475\,\Omega \)
4 \(500\,\Omega \)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365284 In the circuit shown if drift current for the diode is \(20\,\mu A\), the potential difference across the diode is:
supporting img

1 \(2\;V\)
2 \(4.5\;V\)
3 \(4\;V\)
4 \(2.5\;V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365285 Two ideal diodes connected as shown in the figure. The current flowing through the \({R_{2}}\) resistance will be
supporting img

1 \(0.5\,A\)
2 \(3\,A\)
3 \(2\,A\)
4 \(1.25\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is

1 \(1.14\,mA\)
2 \(1\,mA\)
3 \(1\,A\)
4 \(1.14\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365282 Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
supporting img
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365283 Potential drop across forward junction \(p-n\) diode is \(0.7\,V\). If a battery of \(4\,V\) is applied, calculate the resistance to be put in series, if the maximum current in the circuit is \(5\,mA\).

1 \(660\,\Omega \)
2 \(350\,\Omega \)
3 \(475\,\Omega \)
4 \(500\,\Omega \)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365284 In the circuit shown if drift current for the diode is \(20\,\mu A\), the potential difference across the diode is:
supporting img

1 \(2\;V\)
2 \(4.5\;V\)
3 \(4\;V\)
4 \(2.5\;V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365285 Two ideal diodes connected as shown in the figure. The current flowing through the \({R_{2}}\) resistance will be
supporting img

1 \(0.5\,A\)
2 \(3\,A\)
3 \(2\,A\)
4 \(1.25\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is

1 \(1.14\,mA\)
2 \(1\,mA\)
3 \(1\,A\)
4 \(1.14\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365282 Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
supporting img
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365283 Potential drop across forward junction \(p-n\) diode is \(0.7\,V\). If a battery of \(4\,V\) is applied, calculate the resistance to be put in series, if the maximum current in the circuit is \(5\,mA\).

1 \(660\,\Omega \)
2 \(350\,\Omega \)
3 \(475\,\Omega \)
4 \(500\,\Omega \)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365284 In the circuit shown if drift current for the diode is \(20\,\mu A\), the potential difference across the diode is:
supporting img

1 \(2\;V\)
2 \(4.5\;V\)
3 \(4\;V\)
4 \(2.5\;V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365285 Two ideal diodes connected as shown in the figure. The current flowing through the \({R_{2}}\) resistance will be
supporting img

1 \(0.5\,A\)
2 \(3\,A\)
3 \(2\,A\)
4 \(1.25\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is

1 \(1.14\,mA\)
2 \(1\,mA\)
3 \(1\,A\)
4 \(1.14\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365282 Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
supporting img
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365283 Potential drop across forward junction \(p-n\) diode is \(0.7\,V\). If a battery of \(4\,V\) is applied, calculate the resistance to be put in series, if the maximum current in the circuit is \(5\,mA\).

1 \(660\,\Omega \)
2 \(350\,\Omega \)
3 \(475\,\Omega \)
4 \(500\,\Omega \)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365284 In the circuit shown if drift current for the diode is \(20\,\mu A\), the potential difference across the diode is:
supporting img

1 \(2\;V\)
2 \(4.5\;V\)
3 \(4\;V\)
4 \(2.5\;V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365285 Two ideal diodes connected as shown in the figure. The current flowing through the \({R_{2}}\) resistance will be
supporting img

1 \(0.5\,A\)
2 \(3\,A\)
3 \(2\,A\)
4 \(1.25\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365281 A \({p-n}\) junction diode is connected to a battery of emf \(5.7\,V\) in series with a resistant \(5\,k\Omega \) such that it is forward biased. If the barrier potential of the diode is \(0.7\,V\), neglecting the diode resistance, the current in the circuit is

1 \(1.14\,mA\)
2 \(1\,mA\)
3 \(1\,A\)
4 \(1.14\,A\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365282 Assertion :
The value of current through \(p{\rm{ - }}n\) junction (ideal diode) in the given figure will be \(10\;mA\).
supporting img
Reason :
In the above figure, \(p\)-side is at higher potential than \(n\)-side than \(n\)-side so, \(pn\) junction is forward biased.

1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365283 Potential drop across forward junction \(p-n\) diode is \(0.7\,V\). If a battery of \(4\,V\) is applied, calculate the resistance to be put in series, if the maximum current in the circuit is \(5\,mA\).

1 \(660\,\Omega \)
2 \(350\,\Omega \)
3 \(475\,\Omega \)
4 \(500\,\Omega \)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365284 In the circuit shown if drift current for the diode is \(20\,\mu A\), the potential difference across the diode is:
supporting img

1 \(2\;V\)
2 \(4.5\;V\)
3 \(4\;V\)
4 \(2.5\;V\)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS

365285 Two ideal diodes connected as shown in the figure. The current flowing through the \({R_{2}}\) resistance will be
supporting img

1 \(0.5\,A\)
2 \(3\,A\)
3 \(2\,A\)
4 \(1.25\,A\)