PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365184
The upper level of valence band and lower level of conduction band overlap in the case of
1 silicon
2 copper
3 carbon
4 germanium
Explanation:
Copper is a conductor, In conductors, valence band and conduction band are overlapped.Correct option is (2).
KCET - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365185
Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Both Assertion and Reason are incorrect.
Explanation:
The energy gap between valence band and conduction band in Germanium is \(0.76\,eV\) and the energy gap between valence band and conduction band in Silicon is \(1.1\,eV\). Also, it is true that thermal energy produces fewer minority carriers in Silicon than in Germanium.
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365186
Assertion : Diamond behaves like an insulator. Reason : There is a large energy gap between valence band and conduction band of diamond.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
For diamond, \({E_g} = 5.8\,eV\) For \(Si\,{E_g} = 1.1\,eV\) In insulators, the forbidden energy gap is significantly large. When an electric field is applied to such a solid, electrons find it challenging to acquire the substantial amount of energy required to bridge this gap. \(\Rightarrow\) no electron flow occurs. So correct option is (1).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365187
In the insulators
1 The valence band is partially filled with electrons
2 The conduction band is partially filled with electrons
3 The conduction band is partially filled with electrons and valence band is empty
4 The conduction band is empty and the valence band is filled with electrons
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365188
The energy of a photon \({(\lambda=589 {~nm})}\) equals the band gap of a semi-conducting material. The minimum energy required to create a hole-electron pair is
1 4.2 \(eV\)
2 2.1 \(eV\)
3 1.2 \(eV\)
4 0.98 \(eV\)
Explanation:
The minimum energy required to create a hole-electron pair is \({E=\dfrac{h c}{\lambda}}\) where, \({h=6.6 \times 10^{-34} {~J} {~s}}\) \(\begin{gathered}c=3 \times 10^{8} {~m} {~s}^{-1} \\\lambda=589 {~nm}=589 \times 10^{-9} {~m} \\\therefore \quad E=\dfrac{6.6 \times 10^{-34} \times 3 \times 10^{8}}{589 \times 10^{-9} \times 1.6 \times 10^{-19}} {eV}=2.1 {eV}\end{gathered}\). So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365184
The upper level of valence band and lower level of conduction band overlap in the case of
1 silicon
2 copper
3 carbon
4 germanium
Explanation:
Copper is a conductor, In conductors, valence band and conduction band are overlapped.Correct option is (2).
KCET - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365185
Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Both Assertion and Reason are incorrect.
Explanation:
The energy gap between valence band and conduction band in Germanium is \(0.76\,eV\) and the energy gap between valence band and conduction band in Silicon is \(1.1\,eV\). Also, it is true that thermal energy produces fewer minority carriers in Silicon than in Germanium.
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365186
Assertion : Diamond behaves like an insulator. Reason : There is a large energy gap between valence band and conduction band of diamond.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
For diamond, \({E_g} = 5.8\,eV\) For \(Si\,{E_g} = 1.1\,eV\) In insulators, the forbidden energy gap is significantly large. When an electric field is applied to such a solid, electrons find it challenging to acquire the substantial amount of energy required to bridge this gap. \(\Rightarrow\) no electron flow occurs. So correct option is (1).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365187
In the insulators
1 The valence band is partially filled with electrons
2 The conduction band is partially filled with electrons
3 The conduction band is partially filled with electrons and valence band is empty
4 The conduction band is empty and the valence band is filled with electrons
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365188
The energy of a photon \({(\lambda=589 {~nm})}\) equals the band gap of a semi-conducting material. The minimum energy required to create a hole-electron pair is
1 4.2 \(eV\)
2 2.1 \(eV\)
3 1.2 \(eV\)
4 0.98 \(eV\)
Explanation:
The minimum energy required to create a hole-electron pair is \({E=\dfrac{h c}{\lambda}}\) where, \({h=6.6 \times 10^{-34} {~J} {~s}}\) \(\begin{gathered}c=3 \times 10^{8} {~m} {~s}^{-1} \\\lambda=589 {~nm}=589 \times 10^{-9} {~m} \\\therefore \quad E=\dfrac{6.6 \times 10^{-34} \times 3 \times 10^{8}}{589 \times 10^{-9} \times 1.6 \times 10^{-19}} {eV}=2.1 {eV}\end{gathered}\). So correct option is (2)
NEET Test Series from KOTA - 10 Papers In MS WORD
WhatsApp Here
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365184
The upper level of valence band and lower level of conduction band overlap in the case of
1 silicon
2 copper
3 carbon
4 germanium
Explanation:
Copper is a conductor, In conductors, valence band and conduction band are overlapped.Correct option is (2).
KCET - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365185
Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Both Assertion and Reason are incorrect.
Explanation:
The energy gap between valence band and conduction band in Germanium is \(0.76\,eV\) and the energy gap between valence band and conduction band in Silicon is \(1.1\,eV\). Also, it is true that thermal energy produces fewer minority carriers in Silicon than in Germanium.
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365186
Assertion : Diamond behaves like an insulator. Reason : There is a large energy gap between valence band and conduction band of diamond.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
For diamond, \({E_g} = 5.8\,eV\) For \(Si\,{E_g} = 1.1\,eV\) In insulators, the forbidden energy gap is significantly large. When an electric field is applied to such a solid, electrons find it challenging to acquire the substantial amount of energy required to bridge this gap. \(\Rightarrow\) no electron flow occurs. So correct option is (1).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365187
In the insulators
1 The valence band is partially filled with electrons
2 The conduction band is partially filled with electrons
3 The conduction band is partially filled with electrons and valence band is empty
4 The conduction band is empty and the valence band is filled with electrons
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365188
The energy of a photon \({(\lambda=589 {~nm})}\) equals the band gap of a semi-conducting material. The minimum energy required to create a hole-electron pair is
1 4.2 \(eV\)
2 2.1 \(eV\)
3 1.2 \(eV\)
4 0.98 \(eV\)
Explanation:
The minimum energy required to create a hole-electron pair is \({E=\dfrac{h c}{\lambda}}\) where, \({h=6.6 \times 10^{-34} {~J} {~s}}\) \(\begin{gathered}c=3 \times 10^{8} {~m} {~s}^{-1} \\\lambda=589 {~nm}=589 \times 10^{-9} {~m} \\\therefore \quad E=\dfrac{6.6 \times 10^{-34} \times 3 \times 10^{8}}{589 \times 10^{-9} \times 1.6 \times 10^{-19}} {eV}=2.1 {eV}\end{gathered}\). So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365184
The upper level of valence band and lower level of conduction band overlap in the case of
1 silicon
2 copper
3 carbon
4 germanium
Explanation:
Copper is a conductor, In conductors, valence band and conduction band are overlapped.Correct option is (2).
KCET - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365185
Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Both Assertion and Reason are incorrect.
Explanation:
The energy gap between valence band and conduction band in Germanium is \(0.76\,eV\) and the energy gap between valence band and conduction band in Silicon is \(1.1\,eV\). Also, it is true that thermal energy produces fewer minority carriers in Silicon than in Germanium.
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365186
Assertion : Diamond behaves like an insulator. Reason : There is a large energy gap between valence band and conduction band of diamond.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
For diamond, \({E_g} = 5.8\,eV\) For \(Si\,{E_g} = 1.1\,eV\) In insulators, the forbidden energy gap is significantly large. When an electric field is applied to such a solid, electrons find it challenging to acquire the substantial amount of energy required to bridge this gap. \(\Rightarrow\) no electron flow occurs. So correct option is (1).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365187
In the insulators
1 The valence band is partially filled with electrons
2 The conduction band is partially filled with electrons
3 The conduction band is partially filled with electrons and valence band is empty
4 The conduction band is empty and the valence band is filled with electrons
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365188
The energy of a photon \({(\lambda=589 {~nm})}\) equals the band gap of a semi-conducting material. The minimum energy required to create a hole-electron pair is
1 4.2 \(eV\)
2 2.1 \(eV\)
3 1.2 \(eV\)
4 0.98 \(eV\)
Explanation:
The minimum energy required to create a hole-electron pair is \({E=\dfrac{h c}{\lambda}}\) where, \({h=6.6 \times 10^{-34} {~J} {~s}}\) \(\begin{gathered}c=3 \times 10^{8} {~m} {~s}^{-1} \\\lambda=589 {~nm}=589 \times 10^{-9} {~m} \\\therefore \quad E=\dfrac{6.6 \times 10^{-34} \times 3 \times 10^{8}}{589 \times 10^{-9} \times 1.6 \times 10^{-19}} {eV}=2.1 {eV}\end{gathered}\). So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365184
The upper level of valence band and lower level of conduction band overlap in the case of
1 silicon
2 copper
3 carbon
4 germanium
Explanation:
Copper is a conductor, In conductors, valence band and conduction band are overlapped.Correct option is (2).
KCET - 2024
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365185
Assertion : The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason : Thermal energy produces fewer minority carriers in silicon than in germanium.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Both Assertion and Reason are incorrect.
Explanation:
The energy gap between valence band and conduction band in Germanium is \(0.76\,eV\) and the energy gap between valence band and conduction band in Silicon is \(1.1\,eV\). Also, it is true that thermal energy produces fewer minority carriers in Silicon than in Germanium.
AIIMS - 2007
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365186
Assertion : Diamond behaves like an insulator. Reason : There is a large energy gap between valence band and conduction band of diamond.
1 Both Assertion and Reason are correct and Reason is the correct explanation of the Assertion.
2 Both Assertion and Reason are correct but Reason is not the correct explanation of the Assertion.
3 Assertion is correct but Reason is incorrect.
4 Assertion is incorrect but reason is correct.
Explanation:
For diamond, \({E_g} = 5.8\,eV\) For \(Si\,{E_g} = 1.1\,eV\) In insulators, the forbidden energy gap is significantly large. When an electric field is applied to such a solid, electrons find it challenging to acquire the substantial amount of energy required to bridge this gap. \(\Rightarrow\) no electron flow occurs. So correct option is (1).
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365187
In the insulators
1 The valence band is partially filled with electrons
2 The conduction band is partially filled with electrons
3 The conduction band is partially filled with electrons and valence band is empty
4 The conduction band is empty and the valence band is filled with electrons
Explanation:
Conceptual Question
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365188
The energy of a photon \({(\lambda=589 {~nm})}\) equals the band gap of a semi-conducting material. The minimum energy required to create a hole-electron pair is
1 4.2 \(eV\)
2 2.1 \(eV\)
3 1.2 \(eV\)
4 0.98 \(eV\)
Explanation:
The minimum energy required to create a hole-electron pair is \({E=\dfrac{h c}{\lambda}}\) where, \({h=6.6 \times 10^{-34} {~J} {~s}}\) \(\begin{gathered}c=3 \times 10^{8} {~m} {~s}^{-1} \\\lambda=589 {~nm}=589 \times 10^{-9} {~m} \\\therefore \quad E=\dfrac{6.6 \times 10^{-34} \times 3 \times 10^{8}}{589 \times 10^{-9} \times 1.6 \times 10^{-19}} {eV}=2.1 {eV}\end{gathered}\). So correct option is (2)