Diode -(P-n Junction Diode Forward and Reverse Bias)
Semiconductor Electronics Material Devices and Simple Circuits

150906 Consider the junction diode as ideal. The value of current flowing through AB is
original image

1 102 A
2 101 A
3 103 A
4 0 A
Semiconductor Electronics Material Devices and Simple Circuits

150909 In the given figure, a diode D is connected to an external resistance R=100Ω and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be
original image

1 30 mA
2 40 mA
3 20 mA
4 35 mA
Semiconductor Electronics Material Devices and Simple Circuits

150910 The given graph represents VI characteristic for a semiconductor device. Which of the following statement is correct?
original image

1 It is V-I characteristic for solar cell where point A represents open circuit voltage and point B short circuit current
2 It is for a solar cell and points A and B represent open circuit voltage and current, respectively
3 It is for a photodiode and points A and B represent open circuit voltage and current, respectively
4 It is for a LED and points A and B represent open circuit voltage and short circuit current respectively
Semiconductor Electronics Material Devices and Simple Circuits

150853 The circuit shown in the figure contains two diodes each with a forward resistance of 50Ω and with infinite backward resistance if the battery is 6 V, the current through the 100Ω resistance (in) ampere-
original image

1 0
2 0.02 A
3 0.03 A
4 0.036 A
Semiconductor Electronics Material Devices and Simple Circuits

150906 Consider the junction diode as ideal. The value of current flowing through AB is
original image

1 102 A
2 101 A
3 103 A
4 0 A
Semiconductor Electronics Material Devices and Simple Circuits

150907 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be
original image

1 2.5 A
2 10.0 A
3 1.43 A
4 3.13 A
Semiconductor Electronics Material Devices and Simple Circuits

150909 In the given figure, a diode D is connected to an external resistance R=100Ω and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be
original image

1 30 mA
2 40 mA
3 20 mA
4 35 mA
Semiconductor Electronics Material Devices and Simple Circuits

150910 The given graph represents VI characteristic for a semiconductor device. Which of the following statement is correct?
original image

1 It is V-I characteristic for solar cell where point A represents open circuit voltage and point B short circuit current
2 It is for a solar cell and points A and B represent open circuit voltage and current, respectively
3 It is for a photodiode and points A and B represent open circuit voltage and current, respectively
4 It is for a LED and points A and B represent open circuit voltage and short circuit current respectively
Semiconductor Electronics Material Devices and Simple Circuits

150853 The circuit shown in the figure contains two diodes each with a forward resistance of 50Ω and with infinite backward resistance if the battery is 6 V, the current through the 100Ω resistance (in) ampere-
original image

1 0
2 0.02 A
3 0.03 A
4 0.036 A
Semiconductor Electronics Material Devices and Simple Circuits

150906 Consider the junction diode as ideal. The value of current flowing through AB is
original image

1 102 A
2 101 A
3 103 A
4 0 A
Semiconductor Electronics Material Devices and Simple Circuits

150907 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be
original image

1 2.5 A
2 10.0 A
3 1.43 A
4 3.13 A
Semiconductor Electronics Material Devices and Simple Circuits

150909 In the given figure, a diode D is connected to an external resistance R=100Ω and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be
original image

1 30 mA
2 40 mA
3 20 mA
4 35 mA
Semiconductor Electronics Material Devices and Simple Circuits

150910 The given graph represents VI characteristic for a semiconductor device. Which of the following statement is correct?
original image

1 It is V-I characteristic for solar cell where point A represents open circuit voltage and point B short circuit current
2 It is for a solar cell and points A and B represent open circuit voltage and current, respectively
3 It is for a photodiode and points A and B represent open circuit voltage and current, respectively
4 It is for a LED and points A and B represent open circuit voltage and short circuit current respectively
Semiconductor Electronics Material Devices and Simple Circuits

150853 The circuit shown in the figure contains two diodes each with a forward resistance of 50Ω and with infinite backward resistance if the battery is 6 V, the current through the 100Ω resistance (in) ampere-
original image

1 0
2 0.02 A
3 0.03 A
4 0.036 A
Semiconductor Electronics Material Devices and Simple Circuits

150906 Consider the junction diode as ideal. The value of current flowing through AB is
original image

1 102 A
2 101 A
3 103 A
4 0 A
Semiconductor Electronics Material Devices and Simple Circuits

150907 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be
original image

1 2.5 A
2 10.0 A
3 1.43 A
4 3.13 A
Semiconductor Electronics Material Devices and Simple Circuits

150909 In the given figure, a diode D is connected to an external resistance R=100Ω and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be
original image

1 30 mA
2 40 mA
3 20 mA
4 35 mA
Semiconductor Electronics Material Devices and Simple Circuits

150910 The given graph represents VI characteristic for a semiconductor device. Which of the following statement is correct?
original image

1 It is V-I characteristic for solar cell where point A represents open circuit voltage and point B short circuit current
2 It is for a solar cell and points A and B represent open circuit voltage and current, respectively
3 It is for a photodiode and points A and B represent open circuit voltage and current, respectively
4 It is for a LED and points A and B represent open circuit voltage and short circuit current respectively
Semiconductor Electronics Material Devices and Simple Circuits

150853 The circuit shown in the figure contains two diodes each with a forward resistance of 50Ω and with infinite backward resistance if the battery is 6 V, the current through the 100Ω resistance (in) ampere-
original image

1 0
2 0.02 A
3 0.03 A
4 0.036 A
Semiconductor Electronics Material Devices and Simple Circuits

150906 Consider the junction diode as ideal. The value of current flowing through AB is
original image

1 102 A
2 101 A
3 103 A
4 0 A
Semiconductor Electronics Material Devices and Simple Circuits

150907 The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be
original image

1 2.5 A
2 10.0 A
3 1.43 A
4 3.13 A
Semiconductor Electronics Material Devices and Simple Circuits

150909 In the given figure, a diode D is connected to an external resistance R=100Ω and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be
original image

1 30 mA
2 40 mA
3 20 mA
4 35 mA
Semiconductor Electronics Material Devices and Simple Circuits

150910 The given graph represents VI characteristic for a semiconductor device. Which of the following statement is correct?
original image

1 It is V-I characteristic for solar cell where point A represents open circuit voltage and point B short circuit current
2 It is for a solar cell and points A and B represent open circuit voltage and current, respectively
3 It is for a photodiode and points A and B represent open circuit voltage and current, respectively
4 It is for a LED and points A and B represent open circuit voltage and short circuit current respectively
Semiconductor Electronics Material Devices and Simple Circuits

150853 The circuit shown in the figure contains two diodes each with a forward resistance of 50Ω and with infinite backward resistance if the battery is 6 V, the current through the 100Ω resistance (in) ampere-
original image

1 0
2 0.02 A
3 0.03 A
4 0.036 A