Semiconductor Electronics Material Devices and Simple Circuits
150786
In a semiconductor diode, the forward voltage is changed from \(0.5 \mathrm{~V}\) to \(0.7 \mathrm{~V}\), then the forward current changes by \(1 \mathrm{~mA}\). The forward resistance of the diode junction is-
1 \(100 \Omega\)
2 \(50 \Omega\)
3 \(200 \Omega\)
4 \(250 \Omega\)
Explanation:
C Change in voltage \((\Delta \mathrm{V})=0.7-0.5=0.2 \mathrm{~V}\) Change in current \((\Delta \mathrm{I})=1 \mathrm{~mA}=1 \times 10^{-3} \mathrm{~A}\) Then resistance \((\mathrm{R})=\frac{\Delta \mathrm{V}}{\Delta \mathrm{I}}\) \(=\frac{0.2}{1 \times 10^{-3}}\) \(=200 \Omega\)
BCECE-2014
Semiconductor Electronics Material Devices and Simple Circuits
150793
Different voltage are applied across a \(p-n\) junction and the currents are measured from each value. Which of the following graphs is obtained between voltage and current?
1
2
3
4
Explanation:
B p-n junction has low resistance in direction of potential difference. So large current flows.
BCECE-2005
Semiconductor Electronics Material Devices and Simple Circuits
150798
The non-zero potential difference across diode \(D_1\) and that across diode \(D_2\) are equal in the circuit shown in the figure (both the diode are identical in characteristics)
1 4
2 3
3 2
4 1
Explanation:
B In figure (3) both the diodes are forward biased and they will conduct.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150810
In the case of forward biasing of a p-n junction diode, which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark) ?
1
2
3
4
Explanation:
D Given that, When \(\mathrm{p}-\mathrm{n}\) junction is formed, there is a diffusion takes place at the junction. After diffusion these charge carriers combined with their counterparts and neutralized each other. Then, for direction of flow of current is in figure (d).
Karnataka CET-2011
Semiconductor Electronics Material Devices and Simple Circuits
150811
In a p-n junction diode not connected to any circuit:
1 the potential is the same everywhere
2 the p-type side has a higher potential than then n-type side
3 there is an electric field at the junction directed from the n-type side to p-type side
4 there is an electric field at the junction directed from the p-type side to n-type side
Explanation:
C Given that, At \(\mathrm{p}-\mathrm{n}\) junction a potential barrier or depletion layer is formed with \(\mathrm{n}\)-side at higher potential \& p-side at lower potential. Therefore an electric field at the junction directed from \(\mathrm{n}\)-side to \(\mathrm{p}\) - side.
Semiconductor Electronics Material Devices and Simple Circuits
150786
In a semiconductor diode, the forward voltage is changed from \(0.5 \mathrm{~V}\) to \(0.7 \mathrm{~V}\), then the forward current changes by \(1 \mathrm{~mA}\). The forward resistance of the diode junction is-
1 \(100 \Omega\)
2 \(50 \Omega\)
3 \(200 \Omega\)
4 \(250 \Omega\)
Explanation:
C Change in voltage \((\Delta \mathrm{V})=0.7-0.5=0.2 \mathrm{~V}\) Change in current \((\Delta \mathrm{I})=1 \mathrm{~mA}=1 \times 10^{-3} \mathrm{~A}\) Then resistance \((\mathrm{R})=\frac{\Delta \mathrm{V}}{\Delta \mathrm{I}}\) \(=\frac{0.2}{1 \times 10^{-3}}\) \(=200 \Omega\)
BCECE-2014
Semiconductor Electronics Material Devices and Simple Circuits
150793
Different voltage are applied across a \(p-n\) junction and the currents are measured from each value. Which of the following graphs is obtained between voltage and current?
1
2
3
4
Explanation:
B p-n junction has low resistance in direction of potential difference. So large current flows.
BCECE-2005
Semiconductor Electronics Material Devices and Simple Circuits
150798
The non-zero potential difference across diode \(D_1\) and that across diode \(D_2\) are equal in the circuit shown in the figure (both the diode are identical in characteristics)
1 4
2 3
3 2
4 1
Explanation:
B In figure (3) both the diodes are forward biased and they will conduct.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150810
In the case of forward biasing of a p-n junction diode, which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark) ?
1
2
3
4
Explanation:
D Given that, When \(\mathrm{p}-\mathrm{n}\) junction is formed, there is a diffusion takes place at the junction. After diffusion these charge carriers combined with their counterparts and neutralized each other. Then, for direction of flow of current is in figure (d).
Karnataka CET-2011
Semiconductor Electronics Material Devices and Simple Circuits
150811
In a p-n junction diode not connected to any circuit:
1 the potential is the same everywhere
2 the p-type side has a higher potential than then n-type side
3 there is an electric field at the junction directed from the n-type side to p-type side
4 there is an electric field at the junction directed from the p-type side to n-type side
Explanation:
C Given that, At \(\mathrm{p}-\mathrm{n}\) junction a potential barrier or depletion layer is formed with \(\mathrm{n}\)-side at higher potential \& p-side at lower potential. Therefore an electric field at the junction directed from \(\mathrm{n}\)-side to \(\mathrm{p}\) - side.
Semiconductor Electronics Material Devices and Simple Circuits
150786
In a semiconductor diode, the forward voltage is changed from \(0.5 \mathrm{~V}\) to \(0.7 \mathrm{~V}\), then the forward current changes by \(1 \mathrm{~mA}\). The forward resistance of the diode junction is-
1 \(100 \Omega\)
2 \(50 \Omega\)
3 \(200 \Omega\)
4 \(250 \Omega\)
Explanation:
C Change in voltage \((\Delta \mathrm{V})=0.7-0.5=0.2 \mathrm{~V}\) Change in current \((\Delta \mathrm{I})=1 \mathrm{~mA}=1 \times 10^{-3} \mathrm{~A}\) Then resistance \((\mathrm{R})=\frac{\Delta \mathrm{V}}{\Delta \mathrm{I}}\) \(=\frac{0.2}{1 \times 10^{-3}}\) \(=200 \Omega\)
BCECE-2014
Semiconductor Electronics Material Devices and Simple Circuits
150793
Different voltage are applied across a \(p-n\) junction and the currents are measured from each value. Which of the following graphs is obtained between voltage and current?
1
2
3
4
Explanation:
B p-n junction has low resistance in direction of potential difference. So large current flows.
BCECE-2005
Semiconductor Electronics Material Devices and Simple Circuits
150798
The non-zero potential difference across diode \(D_1\) and that across diode \(D_2\) are equal in the circuit shown in the figure (both the diode are identical in characteristics)
1 4
2 3
3 2
4 1
Explanation:
B In figure (3) both the diodes are forward biased and they will conduct.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150810
In the case of forward biasing of a p-n junction diode, which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark) ?
1
2
3
4
Explanation:
D Given that, When \(\mathrm{p}-\mathrm{n}\) junction is formed, there is a diffusion takes place at the junction. After diffusion these charge carriers combined with their counterparts and neutralized each other. Then, for direction of flow of current is in figure (d).
Karnataka CET-2011
Semiconductor Electronics Material Devices and Simple Circuits
150811
In a p-n junction diode not connected to any circuit:
1 the potential is the same everywhere
2 the p-type side has a higher potential than then n-type side
3 there is an electric field at the junction directed from the n-type side to p-type side
4 there is an electric field at the junction directed from the p-type side to n-type side
Explanation:
C Given that, At \(\mathrm{p}-\mathrm{n}\) junction a potential barrier or depletion layer is formed with \(\mathrm{n}\)-side at higher potential \& p-side at lower potential. Therefore an electric field at the junction directed from \(\mathrm{n}\)-side to \(\mathrm{p}\) - side.
Semiconductor Electronics Material Devices and Simple Circuits
150786
In a semiconductor diode, the forward voltage is changed from \(0.5 \mathrm{~V}\) to \(0.7 \mathrm{~V}\), then the forward current changes by \(1 \mathrm{~mA}\). The forward resistance of the diode junction is-
1 \(100 \Omega\)
2 \(50 \Omega\)
3 \(200 \Omega\)
4 \(250 \Omega\)
Explanation:
C Change in voltage \((\Delta \mathrm{V})=0.7-0.5=0.2 \mathrm{~V}\) Change in current \((\Delta \mathrm{I})=1 \mathrm{~mA}=1 \times 10^{-3} \mathrm{~A}\) Then resistance \((\mathrm{R})=\frac{\Delta \mathrm{V}}{\Delta \mathrm{I}}\) \(=\frac{0.2}{1 \times 10^{-3}}\) \(=200 \Omega\)
BCECE-2014
Semiconductor Electronics Material Devices and Simple Circuits
150793
Different voltage are applied across a \(p-n\) junction and the currents are measured from each value. Which of the following graphs is obtained between voltage and current?
1
2
3
4
Explanation:
B p-n junction has low resistance in direction of potential difference. So large current flows.
BCECE-2005
Semiconductor Electronics Material Devices and Simple Circuits
150798
The non-zero potential difference across diode \(D_1\) and that across diode \(D_2\) are equal in the circuit shown in the figure (both the diode are identical in characteristics)
1 4
2 3
3 2
4 1
Explanation:
B In figure (3) both the diodes are forward biased and they will conduct.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150810
In the case of forward biasing of a p-n junction diode, which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark) ?
1
2
3
4
Explanation:
D Given that, When \(\mathrm{p}-\mathrm{n}\) junction is formed, there is a diffusion takes place at the junction. After diffusion these charge carriers combined with their counterparts and neutralized each other. Then, for direction of flow of current is in figure (d).
Karnataka CET-2011
Semiconductor Electronics Material Devices and Simple Circuits
150811
In a p-n junction diode not connected to any circuit:
1 the potential is the same everywhere
2 the p-type side has a higher potential than then n-type side
3 there is an electric field at the junction directed from the n-type side to p-type side
4 there is an electric field at the junction directed from the p-type side to n-type side
Explanation:
C Given that, At \(\mathrm{p}-\mathrm{n}\) junction a potential barrier or depletion layer is formed with \(\mathrm{n}\)-side at higher potential \& p-side at lower potential. Therefore an electric field at the junction directed from \(\mathrm{n}\)-side to \(\mathrm{p}\) - side.
Semiconductor Electronics Material Devices and Simple Circuits
150786
In a semiconductor diode, the forward voltage is changed from \(0.5 \mathrm{~V}\) to \(0.7 \mathrm{~V}\), then the forward current changes by \(1 \mathrm{~mA}\). The forward resistance of the diode junction is-
1 \(100 \Omega\)
2 \(50 \Omega\)
3 \(200 \Omega\)
4 \(250 \Omega\)
Explanation:
C Change in voltage \((\Delta \mathrm{V})=0.7-0.5=0.2 \mathrm{~V}\) Change in current \((\Delta \mathrm{I})=1 \mathrm{~mA}=1 \times 10^{-3} \mathrm{~A}\) Then resistance \((\mathrm{R})=\frac{\Delta \mathrm{V}}{\Delta \mathrm{I}}\) \(=\frac{0.2}{1 \times 10^{-3}}\) \(=200 \Omega\)
BCECE-2014
Semiconductor Electronics Material Devices and Simple Circuits
150793
Different voltage are applied across a \(p-n\) junction and the currents are measured from each value. Which of the following graphs is obtained between voltage and current?
1
2
3
4
Explanation:
B p-n junction has low resistance in direction of potential difference. So large current flows.
BCECE-2005
Semiconductor Electronics Material Devices and Simple Circuits
150798
The non-zero potential difference across diode \(D_1\) and that across diode \(D_2\) are equal in the circuit shown in the figure (both the diode are identical in characteristics)
1 4
2 3
3 2
4 1
Explanation:
B In figure (3) both the diodes are forward biased and they will conduct.
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits
150810
In the case of forward biasing of a p-n junction diode, which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark) ?
1
2
3
4
Explanation:
D Given that, When \(\mathrm{p}-\mathrm{n}\) junction is formed, there is a diffusion takes place at the junction. After diffusion these charge carriers combined with their counterparts and neutralized each other. Then, for direction of flow of current is in figure (d).
Karnataka CET-2011
Semiconductor Electronics Material Devices and Simple Circuits
150811
In a p-n junction diode not connected to any circuit:
1 the potential is the same everywhere
2 the p-type side has a higher potential than then n-type side
3 there is an electric field at the junction directed from the n-type side to p-type side
4 there is an electric field at the junction directed from the p-type side to n-type side
Explanation:
C Given that, At \(\mathrm{p}-\mathrm{n}\) junction a potential barrier or depletion layer is formed with \(\mathrm{n}\)-side at higher potential \& p-side at lower potential. Therefore an electric field at the junction directed from \(\mathrm{n}\)-side to \(\mathrm{p}\) - side.
