Diode -(P-n Junction Diode Forward and Reverse Bias)
Semiconductor Electronics Material Devices and Simple Circuits

150717 For the circuit shown in the figure. The equivalent resistance between point \(A\) \& \(B\) for the two cases (i) \(V_A>V_B\), (ii) \(V_B>V_A\) ( \(D_1\) and \(D_2\) are ideal diodes).
original image

1 \(25, \infty\)
2 \(50, \infty\)
3 \(\infty, 25\)
4 25,25
Semiconductor Electronics Material Devices and Simple Circuits

150718 The current in the circuit shown in the figure, considering ideal diode is
original image

1 \(20 \mathrm{~A}\)
2 \(2 \times 10^{-3} \mathrm{~A}\)
3 \(200 \mathrm{~A}\)
4 \(2 \times 10^{-4} \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150719 A diode having potential difference \(0.5 \quad \mathrm{~V}\) across its junction which does not depend on current, is connected in series with resistance of \(20 \Omega\) across source. If 0.1 A current passes through resistance then what is the voltage of the source?

1 \(1.5 \mathrm{~V}\)
2 \(2.0 \mathrm{~V}\)
3 \(2.5 \mathrm{~V}\)
4 \(5 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

150720 A junction diode has a resistance of \(25 \Omega\) when forward biased and \(2500 \Omega\) when reversed biased. The current in the diode for the arrangement as shown in the figure below will be
original image

1 \(\frac{1}{15} \mathrm{~A}\)
2 \(\frac{1}{7} \mathrm{~A}\)
3 \(\frac{1}{25} \mathrm{~A}\)
4 \(\frac{1}{480} \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150717 For the circuit shown in the figure. The equivalent resistance between point \(A\) \& \(B\) for the two cases (i) \(V_A>V_B\), (ii) \(V_B>V_A\) ( \(D_1\) and \(D_2\) are ideal diodes).
original image

1 \(25, \infty\)
2 \(50, \infty\)
3 \(\infty, 25\)
4 25,25
Semiconductor Electronics Material Devices and Simple Circuits

150718 The current in the circuit shown in the figure, considering ideal diode is
original image

1 \(20 \mathrm{~A}\)
2 \(2 \times 10^{-3} \mathrm{~A}\)
3 \(200 \mathrm{~A}\)
4 \(2 \times 10^{-4} \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150719 A diode having potential difference \(0.5 \quad \mathrm{~V}\) across its junction which does not depend on current, is connected in series with resistance of \(20 \Omega\) across source. If 0.1 A current passes through resistance then what is the voltage of the source?

1 \(1.5 \mathrm{~V}\)
2 \(2.0 \mathrm{~V}\)
3 \(2.5 \mathrm{~V}\)
4 \(5 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

150720 A junction diode has a resistance of \(25 \Omega\) when forward biased and \(2500 \Omega\) when reversed biased. The current in the diode for the arrangement as shown in the figure below will be
original image

1 \(\frac{1}{15} \mathrm{~A}\)
2 \(\frac{1}{7} \mathrm{~A}\)
3 \(\frac{1}{25} \mathrm{~A}\)
4 \(\frac{1}{480} \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150717 For the circuit shown in the figure. The equivalent resistance between point \(A\) \& \(B\) for the two cases (i) \(V_A>V_B\), (ii) \(V_B>V_A\) ( \(D_1\) and \(D_2\) are ideal diodes).
original image

1 \(25, \infty\)
2 \(50, \infty\)
3 \(\infty, 25\)
4 25,25
Semiconductor Electronics Material Devices and Simple Circuits

150718 The current in the circuit shown in the figure, considering ideal diode is
original image

1 \(20 \mathrm{~A}\)
2 \(2 \times 10^{-3} \mathrm{~A}\)
3 \(200 \mathrm{~A}\)
4 \(2 \times 10^{-4} \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150719 A diode having potential difference \(0.5 \quad \mathrm{~V}\) across its junction which does not depend on current, is connected in series with resistance of \(20 \Omega\) across source. If 0.1 A current passes through resistance then what is the voltage of the source?

1 \(1.5 \mathrm{~V}\)
2 \(2.0 \mathrm{~V}\)
3 \(2.5 \mathrm{~V}\)
4 \(5 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

150720 A junction diode has a resistance of \(25 \Omega\) when forward biased and \(2500 \Omega\) when reversed biased. The current in the diode for the arrangement as shown in the figure below will be
original image

1 \(\frac{1}{15} \mathrm{~A}\)
2 \(\frac{1}{7} \mathrm{~A}\)
3 \(\frac{1}{25} \mathrm{~A}\)
4 \(\frac{1}{480} \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150717 For the circuit shown in the figure. The equivalent resistance between point \(A\) \& \(B\) for the two cases (i) \(V_A>V_B\), (ii) \(V_B>V_A\) ( \(D_1\) and \(D_2\) are ideal diodes).
original image

1 \(25, \infty\)
2 \(50, \infty\)
3 \(\infty, 25\)
4 25,25
Semiconductor Electronics Material Devices and Simple Circuits

150718 The current in the circuit shown in the figure, considering ideal diode is
original image

1 \(20 \mathrm{~A}\)
2 \(2 \times 10^{-3} \mathrm{~A}\)
3 \(200 \mathrm{~A}\)
4 \(2 \times 10^{-4} \mathrm{~A}\)
Semiconductor Electronics Material Devices and Simple Circuits

150719 A diode having potential difference \(0.5 \quad \mathrm{~V}\) across its junction which does not depend on current, is connected in series with resistance of \(20 \Omega\) across source. If 0.1 A current passes through resistance then what is the voltage of the source?

1 \(1.5 \mathrm{~V}\)
2 \(2.0 \mathrm{~V}\)
3 \(2.5 \mathrm{~V}\)
4 \(5 \mathrm{~V}\)
Semiconductor Electronics Material Devices and Simple Circuits

150720 A junction diode has a resistance of \(25 \Omega\) when forward biased and \(2500 \Omega\) when reversed biased. The current in the diode for the arrangement as shown in the figure below will be
original image

1 \(\frac{1}{15} \mathrm{~A}\)
2 \(\frac{1}{7} \mathrm{~A}\)
3 \(\frac{1}{25} \mathrm{~A}\)
4 \(\frac{1}{480} \mathrm{~A}\)