150549 A p-type semiconductor has acceptor levels 57 me \(V\) above the valence band. The maximum wavelength of light required to create a hole

150556 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and \(0.17 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\). The electron and hole densities are each equal to \(2.5 \times\) \(10^{19} \mathrm{~m}^3\). The electrical conductivity of germanium is

150557 A potential difference of \(2 \mathrm{~V}\) is applied between the opposite faces of a Ge crystal plate of area 1 \(\mathrm{cm}^2\) and thickness \(0.5 \mathrm{~mm}\). If the concentration of electrons in Ge is \(2 \times 10^{19} / \mathrm{m}^2\) and mobilities of electrons and holes are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and 0.14 \(\mathrm{m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) respectively, then the current flowing through the plate will be

150559 A conductor and a semi-conductor are connected in parallel as shown in the figure. At a certain voltage both ammeters registers the same current. If the voltage of the DC source is increased then

150549 A p-type semiconductor has acceptor levels 57 me \(V\) above the valence band. The maximum wavelength of light required to create a hole

150556 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and \(0.17 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\). The electron and hole densities are each equal to \(2.5 \times\) \(10^{19} \mathrm{~m}^3\). The electrical conductivity of germanium is

150557 A potential difference of \(2 \mathrm{~V}\) is applied between the opposite faces of a Ge crystal plate of area 1 \(\mathrm{cm}^2\) and thickness \(0.5 \mathrm{~mm}\). If the concentration of electrons in Ge is \(2 \times 10^{19} / \mathrm{m}^2\) and mobilities of electrons and holes are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and 0.14 \(\mathrm{m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) respectively, then the current flowing through the plate will be

150559 A conductor and a semi-conductor are connected in parallel as shown in the figure. At a certain voltage both ammeters registers the same current. If the voltage of the DC source is increased then

150549 A p-type semiconductor has acceptor levels 57 me \(V\) above the valence band. The maximum wavelength of light required to create a hole

150556 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and \(0.17 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\). The electron and hole densities are each equal to \(2.5 \times\) \(10^{19} \mathrm{~m}^3\). The electrical conductivity of germanium is

150557 A potential difference of \(2 \mathrm{~V}\) is applied between the opposite faces of a Ge crystal plate of area 1 \(\mathrm{cm}^2\) and thickness \(0.5 \mathrm{~mm}\). If the concentration of electrons in Ge is \(2 \times 10^{19} / \mathrm{m}^2\) and mobilities of electrons and holes are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and 0.14 \(\mathrm{m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) respectively, then the current flowing through the plate will be

150559 A conductor and a semi-conductor are connected in parallel as shown in the figure. At a certain voltage both ammeters registers the same current. If the voltage of the DC source is increased then

150549 A p-type semiconductor has acceptor levels 57 me \(V\) above the valence band. The maximum wavelength of light required to create a hole

150556 Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and \(0.17 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\). The electron and hole densities are each equal to \(2.5 \times\) \(10^{19} \mathrm{~m}^3\). The electrical conductivity of germanium is

150557 A potential difference of \(2 \mathrm{~V}\) is applied between the opposite faces of a Ge crystal plate of area 1 \(\mathrm{cm}^2\) and thickness \(0.5 \mathrm{~mm}\). If the concentration of electrons in Ge is \(2 \times 10^{19} / \mathrm{m}^2\) and mobilities of electrons and holes are \(0.36 \mathrm{~m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) and 0.14 \(\mathrm{m}^2 \mathrm{~V}^{-1} \mathrm{~s}^{-1}\) respectively, then the current flowing through the plate will be

150559 A conductor and a semi-conductor are connected in parallel as shown in the figure. At a certain voltage both ammeters registers the same current. If the voltage of the DC source is increased then