150528 Suppose a ' \(n\) ' - type wafer is created by doping Si crystal having \(5 \times 10^{28}\) atoms \(/ \mathrm{m}^3\) with \(1 \mathrm{ppm}\) concentration of As. On the surface \(200 \mathrm{ppm}\) Boron is added to create ' \(P\) ' region in this wafer. Considering \(n_i=1.5 \times 10^{16} \mathrm{~m}^{-3}\) calculate the density of the minority charge carriers in the \(p\) regions.

150530 Mobility of electrons and holes in a sample of intrinsic \(\mathrm{Ge}\) at room temperature are \(0.35 \mathrm{~m}^2 / \mathrm{V}\)-s and \(0.18 \mathrm{~m}^2 / \mathrm{V}\)-s respectively. If the electron and hole densities are each equal to \(\mathbf{2 . 5} \times \mathbf{1 0} / \mathrm{m}^3\), the Ge conductivity will be

150532 A Ge specimen is doped with Al. The concentration of acceptor atoms is \(10^{21}\) atoms \(/ \mathrm{m}^3\). Given that the intrinsic concentration of electron-hole pairs is \(\sim 10^{19} / \mathrm{m}^3\), the concentration of electrons in the specimen is

150525 Assertion: The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature.
Reason: It is due to law of mass action.

150528 Suppose a ' \(n\) ' - type wafer is created by doping Si crystal having \(5 \times 10^{28}\) atoms \(/ \mathrm{m}^3\) with \(1 \mathrm{ppm}\) concentration of As. On the surface \(200 \mathrm{ppm}\) Boron is added to create ' \(P\) ' region in this wafer. Considering \(n_i=1.5 \times 10^{16} \mathrm{~m}^{-3}\) calculate the density of the minority charge carriers in the \(p\) regions.

150530 Mobility of electrons and holes in a sample of intrinsic \(\mathrm{Ge}\) at room temperature are \(0.35 \mathrm{~m}^2 / \mathrm{V}\)-s and \(0.18 \mathrm{~m}^2 / \mathrm{V}\)-s respectively. If the electron and hole densities are each equal to \(\mathbf{2 . 5} \times \mathbf{1 0} / \mathrm{m}^3\), the Ge conductivity will be

150532 A Ge specimen is doped with Al. The concentration of acceptor atoms is \(10^{21}\) atoms \(/ \mathrm{m}^3\). Given that the intrinsic concentration of electron-hole pairs is \(\sim 10^{19} / \mathrm{m}^3\), the concentration of electrons in the specimen is

150525 Assertion: The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature.
Reason: It is due to law of mass action.

150528 Suppose a ' \(n\) ' - type wafer is created by doping Si crystal having \(5 \times 10^{28}\) atoms \(/ \mathrm{m}^3\) with \(1 \mathrm{ppm}\) concentration of As. On the surface \(200 \mathrm{ppm}\) Boron is added to create ' \(P\) ' region in this wafer. Considering \(n_i=1.5 \times 10^{16} \mathrm{~m}^{-3}\) calculate the density of the minority charge carriers in the \(p\) regions.

150530 Mobility of electrons and holes in a sample of intrinsic \(\mathrm{Ge}\) at room temperature are \(0.35 \mathrm{~m}^2 / \mathrm{V}\)-s and \(0.18 \mathrm{~m}^2 / \mathrm{V}\)-s respectively. If the electron and hole densities are each equal to \(\mathbf{2 . 5} \times \mathbf{1 0} / \mathrm{m}^3\), the Ge conductivity will be

150532 A Ge specimen is doped with Al. The concentration of acceptor atoms is \(10^{21}\) atoms \(/ \mathrm{m}^3\). Given that the intrinsic concentration of electron-hole pairs is \(\sim 10^{19} / \mathrm{m}^3\), the concentration of electrons in the specimen is

150525 Assertion: The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature.
Reason: It is due to law of mass action.

150528 Suppose a ' \(n\) ' - type wafer is created by doping Si crystal having \(5 \times 10^{28}\) atoms \(/ \mathrm{m}^3\) with \(1 \mathrm{ppm}\) concentration of As. On the surface \(200 \mathrm{ppm}\) Boron is added to create ' \(P\) ' region in this wafer. Considering \(n_i=1.5 \times 10^{16} \mathrm{~m}^{-3}\) calculate the density of the minority charge carriers in the \(p\) regions.

150530 Mobility of electrons and holes in a sample of intrinsic \(\mathrm{Ge}\) at room temperature are \(0.35 \mathrm{~m}^2 / \mathrm{V}\)-s and \(0.18 \mathrm{~m}^2 / \mathrm{V}\)-s respectively. If the electron and hole densities are each equal to \(\mathbf{2 . 5} \times \mathbf{1 0} / \mathrm{m}^3\), the Ge conductivity will be

150532 A Ge specimen is doped with Al. The concentration of acceptor atoms is \(10^{21}\) atoms \(/ \mathrm{m}^3\). Given that the intrinsic concentration of electron-hole pairs is \(\sim 10^{19} / \mathrm{m}^3\), the concentration of electrons in the specimen is

150525 Assertion: The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature.
Reason: It is due to law of mass action.