QBManager

Semiconductor Electronics Material Devices and Simple Circuits

150522 A pure semiconductor has equal electron and hole concentration of $10^{16} m^{- 3}$ . Doping by gallium increases $n_{h}$ to $5 \times 10^{22} m^{- 3}$ . Then, the value of $n_{e}$ in the doped semiconductor is

1

10^{6} / m^{3}

2

10^{22} / m^{3}

3

2 \times 10^{6} / m^{3}

4

2 \times 10^{9} / m^{3}

Explanation:

D Given,
$n_{i} = 10^{16} m^{- 3}, n_{h} = 5 \times 10^{22} m^{- 3}, n_{e} = ?$
We know that,
$n_{e} \times n_{h} = n_{i}^{2}$
$n_{e} = \frac{n_{i}^{2}}{n_{h}} = \frac{{(10^{16})}^{2}}{5 \times 10^{22}}$
$n_{e} = \frac{10^{32} \times 10^{- 22}}{5}$
$n_{e} = 0.2 \times 10^{10}$
$n_{e} = 2 \times 10^{9} / m^{3}$

AIIMS-26.05.2019(M) Shift-1

Semiconductor Electronics Material Devices and Simple Circuits

150523 Assertion: The current gain in common base circuit is always less than one.
Reason: At constant collector voltage the change in collector current is more than the change in emitter current.

1 If both Assertion and Reason are correct and reason is the correct explanation of Assertion.

2 If both Assertion and Reason are correct, but Reason is not the correct explanation of Assertion

3 If Assertion is correct but Reason is incorrect

4 If both the Assertion and Reason are incorrect

AIIMS-27.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150520 Assertion: Binding energy increase with increase in atomic mass number.
Reason: Density of nucleus increase with increase in atomic mass number.

1 If both assertion and reason are true and reason is the correct explanation of assertion.

2 If both assertion and reason are true but reason is not the correct explanation of assertion.

3 If assertion is true but reason is false.

4 If both assertion and reason are false.

AIIMS-26.05.2019(E) Shift-2

Semiconductor Electronics Material Devices and Simple Circuits

150526 Assertion: The resistivity of a semi-conductor increases with temperature
Reason: The atoms of semi-conductor vibrate with larger amplitude at higher temperatures there by increasing its resistivity.

1 If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion.

2 If both Assertion and Reason are correct but Reason in not a correct explanation of the Assertion.

3 If the Assertion is correct but Reason is incorrect.

4 If both the Assertion and Reason are incorrect.

5 If the Assertion is incorrect but the Reason is correct.

AIIMS-2003

Semiconductor Electronics Material Devices and Simple Circuits

150527 What is the conductivity of a semiconductor if electron density $= 5 \times 10^{12} / {cm}^{3}$ and hole density $= 8 \times 10^{13} / {cm}^{3} (μ_{e} = 2.3 m^{2} V^{- 1} s^{- 1}, μ_{h} = 0.01 m^{2} V^{- 1} S^{-}$ 1)

1

5.634 Ω^{- 1} m^{- 1}

2

1.968 Ω^{- 1} m^{- 1}

3

3.421 Ω^{- 1} m^{- 1}

4

8.964 Ω^{- 1} m^{- 1}

Explanation:

B Given that
Electron density $(n_{e}) = 5 \times 10^{12} / {cm}^{3}$
Hole density $(n_{h}) = 8 \times 10^{13} / {cm}^{3}$
Mobility of electron $(μ_{e}) = 2.3 m^{2} V^{- 1} s^{- 1}$
Mobility of hole $(μ_{h}) = 0.01 m^{2} V^{- 1} s^{- 1}$
We know that, the conductivity of a semiconductor is-
$σ = e (n_{e} μ_{e} + n_{h} μ_{h})$
$σ = 1.6 \times 10^{- 19} (5 \times 10^{12} \times 2.3 + 8 \times 10^{13} \times 0.01)$
$σ = 1.968 Ω^{- 1} m^{- 1}$

AIIMS-26.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150522 A pure semiconductor has equal electron and hole concentration of $10^{16} m^{- 3}$ . Doping by gallium increases $n_{h}$ to $5 \times 10^{22} m^{- 3}$ . Then, the value of $n_{e}$ in the doped semiconductor is

1

10^{6} / m^{3}

2

10^{22} / m^{3}

3

2 \times 10^{6} / m^{3}

4

2 \times 10^{9} / m^{3}

Explanation:

D Given,
$n_{i} = 10^{16} m^{- 3}, n_{h} = 5 \times 10^{22} m^{- 3}, n_{e} = ?$
We know that,
$n_{e} \times n_{h} = n_{i}^{2}$
$n_{e} = \frac{n_{i}^{2}}{n_{h}} = \frac{{(10^{16})}^{2}}{5 \times 10^{22}}$
$n_{e} = \frac{10^{32} \times 10^{- 22}}{5}$
$n_{e} = 0.2 \times 10^{10}$
$n_{e} = 2 \times 10^{9} / m^{3}$

AIIMS-26.05.2019(M) Shift-1

Semiconductor Electronics Material Devices and Simple Circuits

150523 Assertion: The current gain in common base circuit is always less than one.
Reason: At constant collector voltage the change in collector current is more than the change in emitter current.

1 If both Assertion and Reason are correct and reason is the correct explanation of Assertion.

2 If both Assertion and Reason are correct, but Reason is not the correct explanation of Assertion

3 If Assertion is correct but Reason is incorrect

4 If both the Assertion and Reason are incorrect

AIIMS-27.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150520 Assertion: Binding energy increase with increase in atomic mass number.
Reason: Density of nucleus increase with increase in atomic mass number.

1 If both assertion and reason are true and reason is the correct explanation of assertion.

2 If both assertion and reason are true but reason is not the correct explanation of assertion.

3 If assertion is true but reason is false.

4 If both assertion and reason are false.

AIIMS-26.05.2019(E) Shift-2

Semiconductor Electronics Material Devices and Simple Circuits

150526 Assertion: The resistivity of a semi-conductor increases with temperature
Reason: The atoms of semi-conductor vibrate with larger amplitude at higher temperatures there by increasing its resistivity.

1 If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion.

2 If both Assertion and Reason are correct but Reason in not a correct explanation of the Assertion.

3 If the Assertion is correct but Reason is incorrect.

4 If both the Assertion and Reason are incorrect.

5 If the Assertion is incorrect but the Reason is correct.

AIIMS-2003

Semiconductor Electronics Material Devices and Simple Circuits

150527 What is the conductivity of a semiconductor if electron density $= 5 \times 10^{12} / {cm}^{3}$ and hole density $= 8 \times 10^{13} / {cm}^{3} (μ_{e} = 2.3 m^{2} V^{- 1} s^{- 1}, μ_{h} = 0.01 m^{2} V^{- 1} S^{-}$ 1)

1

5.634 Ω^{- 1} m^{- 1}

2

1.968 Ω^{- 1} m^{- 1}

3

3.421 Ω^{- 1} m^{- 1}

4

8.964 Ω^{- 1} m^{- 1}

Explanation:

B Given that
Electron density $(n_{e}) = 5 \times 10^{12} / {cm}^{3}$
Hole density $(n_{h}) = 8 \times 10^{13} / {cm}^{3}$
Mobility of electron $(μ_{e}) = 2.3 m^{2} V^{- 1} s^{- 1}$
Mobility of hole $(μ_{h}) = 0.01 m^{2} V^{- 1} s^{- 1}$
We know that, the conductivity of a semiconductor is-
$σ = e (n_{e} μ_{e} + n_{h} μ_{h})$
$σ = 1.6 \times 10^{- 19} (5 \times 10^{12} \times 2.3 + 8 \times 10^{13} \times 0.01)$
$σ = 1.968 Ω^{- 1} m^{- 1}$

AIIMS-26.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150522 A pure semiconductor has equal electron and hole concentration of $10^{16} m^{- 3}$ . Doping by gallium increases $n_{h}$ to $5 \times 10^{22} m^{- 3}$ . Then, the value of $n_{e}$ in the doped semiconductor is

1

10^{6} / m^{3}

2

10^{22} / m^{3}

3

2 \times 10^{6} / m^{3}

4

2 \times 10^{9} / m^{3}

Explanation:

D Given,
$n_{i} = 10^{16} m^{- 3}, n_{h} = 5 \times 10^{22} m^{- 3}, n_{e} = ?$
We know that,
$n_{e} \times n_{h} = n_{i}^{2}$
$n_{e} = \frac{n_{i}^{2}}{n_{h}} = \frac{{(10^{16})}^{2}}{5 \times 10^{22}}$
$n_{e} = \frac{10^{32} \times 10^{- 22}}{5}$
$n_{e} = 0.2 \times 10^{10}$
$n_{e} = 2 \times 10^{9} / m^{3}$

AIIMS-26.05.2019(M) Shift-1

Semiconductor Electronics Material Devices and Simple Circuits

150523 Assertion: The current gain in common base circuit is always less than one.
Reason: At constant collector voltage the change in collector current is more than the change in emitter current.

1 If both Assertion and Reason are correct and reason is the correct explanation of Assertion.

2 If both Assertion and Reason are correct, but Reason is not the correct explanation of Assertion

3 If Assertion is correct but Reason is incorrect

4 If both the Assertion and Reason are incorrect

AIIMS-27.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150520 Assertion: Binding energy increase with increase in atomic mass number.
Reason: Density of nucleus increase with increase in atomic mass number.

1 If both assertion and reason are true and reason is the correct explanation of assertion.

2 If both assertion and reason are true but reason is not the correct explanation of assertion.

3 If assertion is true but reason is false.

4 If both assertion and reason are false.

AIIMS-26.05.2019(E) Shift-2

Semiconductor Electronics Material Devices and Simple Circuits

150526 Assertion: The resistivity of a semi-conductor increases with temperature
Reason: The atoms of semi-conductor vibrate with larger amplitude at higher temperatures there by increasing its resistivity.

1 If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion.

2 If both Assertion and Reason are correct but Reason in not a correct explanation of the Assertion.

3 If the Assertion is correct but Reason is incorrect.

4 If both the Assertion and Reason are incorrect.

5 If the Assertion is incorrect but the Reason is correct.

AIIMS-2003

Semiconductor Electronics Material Devices and Simple Circuits

150527 What is the conductivity of a semiconductor if electron density $= 5 \times 10^{12} / {cm}^{3}$ and hole density $= 8 \times 10^{13} / {cm}^{3} (μ_{e} = 2.3 m^{2} V^{- 1} s^{- 1}, μ_{h} = 0.01 m^{2} V^{- 1} S^{-}$ 1)

1

5.634 Ω^{- 1} m^{- 1}

2

1.968 Ω^{- 1} m^{- 1}

3

3.421 Ω^{- 1} m^{- 1}

4

8.964 Ω^{- 1} m^{- 1}

Explanation:

B Given that
Electron density $(n_{e}) = 5 \times 10^{12} / {cm}^{3}$
Hole density $(n_{h}) = 8 \times 10^{13} / {cm}^{3}$
Mobility of electron $(μ_{e}) = 2.3 m^{2} V^{- 1} s^{- 1}$
Mobility of hole $(μ_{h}) = 0.01 m^{2} V^{- 1} s^{- 1}$
We know that, the conductivity of a semiconductor is-
$σ = e (n_{e} μ_{e} + n_{h} μ_{h})$
$σ = 1.6 \times 10^{- 19} (5 \times 10^{12} \times 2.3 + 8 \times 10^{13} \times 0.01)$
$σ = 1.968 Ω^{- 1} m^{- 1}$

AIIMS-26.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150522 A pure semiconductor has equal electron and hole concentration of $10^{16} m^{- 3}$ . Doping by gallium increases $n_{h}$ to $5 \times 10^{22} m^{- 3}$ . Then, the value of $n_{e}$ in the doped semiconductor is

1

10^{6} / m^{3}

2

10^{22} / m^{3}

3

2 \times 10^{6} / m^{3}

4

2 \times 10^{9} / m^{3}

Explanation:

D Given,
$n_{i} = 10^{16} m^{- 3}, n_{h} = 5 \times 10^{22} m^{- 3}, n_{e} = ?$
We know that,
$n_{e} \times n_{h} = n_{i}^{2}$
$n_{e} = \frac{n_{i}^{2}}{n_{h}} = \frac{{(10^{16})}^{2}}{5 \times 10^{22}}$
$n_{e} = \frac{10^{32} \times 10^{- 22}}{5}$
$n_{e} = 0.2 \times 10^{10}$
$n_{e} = 2 \times 10^{9} / m^{3}$

AIIMS-26.05.2019(M) Shift-1

Semiconductor Electronics Material Devices and Simple Circuits

150523 Assertion: The current gain in common base circuit is always less than one.
Reason: At constant collector voltage the change in collector current is more than the change in emitter current.

1 If both Assertion and Reason are correct and reason is the correct explanation of Assertion.

2 If both Assertion and Reason are correct, but Reason is not the correct explanation of Assertion

3 If Assertion is correct but Reason is incorrect

4 If both the Assertion and Reason are incorrect

AIIMS-27.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150520 Assertion: Binding energy increase with increase in atomic mass number.
Reason: Density of nucleus increase with increase in atomic mass number.

1 If both assertion and reason are true and reason is the correct explanation of assertion.

2 If both assertion and reason are true but reason is not the correct explanation of assertion.

3 If assertion is true but reason is false.

4 If both assertion and reason are false.

AIIMS-26.05.2019(E) Shift-2

Semiconductor Electronics Material Devices and Simple Circuits

150526 Assertion: The resistivity of a semi-conductor increases with temperature
Reason: The atoms of semi-conductor vibrate with larger amplitude at higher temperatures there by increasing its resistivity.

1 If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion.

2 If both Assertion and Reason are correct but Reason in not a correct explanation of the Assertion.

3 If the Assertion is correct but Reason is incorrect.

4 If both the Assertion and Reason are incorrect.

5 If the Assertion is incorrect but the Reason is correct.

AIIMS-2003

Semiconductor Electronics Material Devices and Simple Circuits

150527 What is the conductivity of a semiconductor if electron density $= 5 \times 10^{12} / {cm}^{3}$ and hole density $= 8 \times 10^{13} / {cm}^{3} (μ_{e} = 2.3 m^{2} V^{- 1} s^{- 1}, μ_{h} = 0.01 m^{2} V^{- 1} S^{-}$ 1)

1

5.634 Ω^{- 1} m^{- 1}

2

1.968 Ω^{- 1} m^{- 1}

3

3.421 Ω^{- 1} m^{- 1}

4

8.964 Ω^{- 1} m^{- 1}

Explanation:

B Given that
Electron density $(n_{e}) = 5 \times 10^{12} / {cm}^{3}$
Hole density $(n_{h}) = 8 \times 10^{13} / {cm}^{3}$
Mobility of electron $(μ_{e}) = 2.3 m^{2} V^{- 1} s^{- 1}$
Mobility of hole $(μ_{h}) = 0.01 m^{2} V^{- 1} s^{- 1}$
We know that, the conductivity of a semiconductor is-
$σ = e (n_{e} μ_{e} + n_{h} μ_{h})$
$σ = 1.6 \times 10^{- 19} (5 \times 10^{12} \times 2.3 + 8 \times 10^{13} \times 0.01)$
$σ = 1.968 Ω^{- 1} m^{- 1}$

AIIMS-26.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150522 A pure semiconductor has equal electron and hole concentration of $10^{16} m^{- 3}$ . Doping by gallium increases $n_{h}$ to $5 \times 10^{22} m^{- 3}$ . Then, the value of $n_{e}$ in the doped semiconductor is

1

10^{6} / m^{3}

2

10^{22} / m^{3}

3

2 \times 10^{6} / m^{3}

4

2 \times 10^{9} / m^{3}

Explanation:

D Given,
$n_{i} = 10^{16} m^{- 3}, n_{h} = 5 \times 10^{22} m^{- 3}, n_{e} = ?$
We know that,
$n_{e} \times n_{h} = n_{i}^{2}$
$n_{e} = \frac{n_{i}^{2}}{n_{h}} = \frac{{(10^{16})}^{2}}{5 \times 10^{22}}$
$n_{e} = \frac{10^{32} \times 10^{- 22}}{5}$
$n_{e} = 0.2 \times 10^{10}$
$n_{e} = 2 \times 10^{9} / m^{3}$

AIIMS-26.05.2019(M) Shift-1

Semiconductor Electronics Material Devices and Simple Circuits

150523 Assertion: The current gain in common base circuit is always less than one.
Reason: At constant collector voltage the change in collector current is more than the change in emitter current.

1 If both Assertion and Reason are correct and reason is the correct explanation of Assertion.

2 If both Assertion and Reason are correct, but Reason is not the correct explanation of Assertion

3 If Assertion is correct but Reason is incorrect

4 If both the Assertion and Reason are incorrect

AIIMS-27.05.2018(M)

Semiconductor Electronics Material Devices and Simple Circuits

150520 Assertion: Binding energy increase with increase in atomic mass number.
Reason: Density of nucleus increase with increase in atomic mass number.

1 If both assertion and reason are true and reason is the correct explanation of assertion.

2 If both assertion and reason are true but reason is not the correct explanation of assertion.

3 If assertion is true but reason is false.

4 If both assertion and reason are false.

AIIMS-26.05.2019(E) Shift-2

Semiconductor Electronics Material Devices and Simple Circuits

150526 Assertion: The resistivity of a semi-conductor increases with temperature
Reason: The atoms of semi-conductor vibrate with larger amplitude at higher temperatures there by increasing its resistivity.

1 If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion.

2 If both Assertion and Reason are correct but Reason in not a correct explanation of the Assertion.

3 If the Assertion is correct but Reason is incorrect.

4 If both the Assertion and Reason are incorrect.

5 If the Assertion is incorrect but the Reason is correct.

AIIMS-2003

Semiconductor Electronics Material Devices and Simple Circuits

150527 What is the conductivity of a semiconductor if electron density $= 5 \times 10^{12} / {cm}^{3}$ and hole density $= 8 \times 10^{13} / {cm}^{3} (μ_{e} = 2.3 m^{2} V^{- 1} s^{- 1}, μ_{h} = 0.01 m^{2} V^{- 1} S^{-}$ 1)

1

5.634 Ω^{- 1} m^{- 1}

2

1.968 Ω^{- 1} m^{- 1}

3

3.421 Ω^{- 1} m^{- 1}

4

8.964 Ω^{- 1} m^{- 1}

Explanation:

B Given that
Electron density $(n_{e}) = 5 \times 10^{12} / {cm}^{3}$
Hole density $(n_{h}) = 8 \times 10^{13} / {cm}^{3}$
Mobility of electron $(μ_{e}) = 2.3 m^{2} V^{- 1} s^{- 1}$
Mobility of hole $(μ_{h}) = 0.01 m^{2} V^{- 1} s^{- 1}$
We know that, the conductivity of a semiconductor is-
$σ = e (n_{e} μ_{e} + n_{h} μ_{h})$
$σ = 1.6 \times 10^{- 19} (5 \times 10^{12} \times 2.3 + 8 \times 10^{13} \times 0.01)$
$σ = 1.968 Ω^{- 1} m^{- 1}$

AIIMS-26.05.2018(M)

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