142255 If the work functions of three photosensitive materials are $1 \mathrm{eV}, 2 \mathrm{eV}$ and $3 \mathrm{eV}$ respectively, then the ratio of the respective frequencies of light that produce photoelectrons of maximum kinetic energy of $1 \mathrm{eV}$ from each of them is

142256 The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $600 \mathrm{~nm}$ is incident on it. The energy band gap (in $\mathrm{eV}$ ) for the semiconductor is

142257 The maximum velocities of the photoelectrons ejected are $\mathrm{V}$ and $2 \mathrm{~V}$ for the incident light of wavelength $400 \mathrm{~nm}$ and $250 \mathrm{~nm}$ on a metal surface respectively. the work function of the metal in terms of Planck's constant $h$ and velocity of light $\mathrm{c}$ is

142258 If the frequency of incident light falling on a photosensitive metal is doubled, the kinetic energy of the emitted photoelectron is

142259 A photo detector used to detect the wavelength of $1700 \mathrm{~nm}$, has energy gap of about

142255 If the work functions of three photosensitive materials are $1 \mathrm{eV}, 2 \mathrm{eV}$ and $3 \mathrm{eV}$ respectively, then the ratio of the respective frequencies of light that produce photoelectrons of maximum kinetic energy of $1 \mathrm{eV}$ from each of them is

142256 The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $600 \mathrm{~nm}$ is incident on it. The energy band gap (in $\mathrm{eV}$ ) for the semiconductor is

142257 The maximum velocities of the photoelectrons ejected are $\mathrm{V}$ and $2 \mathrm{~V}$ for the incident light of wavelength $400 \mathrm{~nm}$ and $250 \mathrm{~nm}$ on a metal surface respectively. the work function of the metal in terms of Planck's constant $h$ and velocity of light $\mathrm{c}$ is

142258 If the frequency of incident light falling on a photosensitive metal is doubled, the kinetic energy of the emitted photoelectron is

142259 A photo detector used to detect the wavelength of $1700 \mathrm{~nm}$, has energy gap of about

142255 If the work functions of three photosensitive materials are $1 \mathrm{eV}, 2 \mathrm{eV}$ and $3 \mathrm{eV}$ respectively, then the ratio of the respective frequencies of light that produce photoelectrons of maximum kinetic energy of $1 \mathrm{eV}$ from each of them is

142256 The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $600 \mathrm{~nm}$ is incident on it. The energy band gap (in $\mathrm{eV}$ ) for the semiconductor is

142257 The maximum velocities of the photoelectrons ejected are $\mathrm{V}$ and $2 \mathrm{~V}$ for the incident light of wavelength $400 \mathrm{~nm}$ and $250 \mathrm{~nm}$ on a metal surface respectively. the work function of the metal in terms of Planck's constant $h$ and velocity of light $\mathrm{c}$ is

142258 If the frequency of incident light falling on a photosensitive metal is doubled, the kinetic energy of the emitted photoelectron is

142259 A photo detector used to detect the wavelength of $1700 \mathrm{~nm}$, has energy gap of about

142255 If the work functions of three photosensitive materials are $1 \mathrm{eV}, 2 \mathrm{eV}$ and $3 \mathrm{eV}$ respectively, then the ratio of the respective frequencies of light that produce photoelectrons of maximum kinetic energy of $1 \mathrm{eV}$ from each of them is

142256 The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $600 \mathrm{~nm}$ is incident on it. The energy band gap (in $\mathrm{eV}$ ) for the semiconductor is

142257 The maximum velocities of the photoelectrons ejected are $\mathrm{V}$ and $2 \mathrm{~V}$ for the incident light of wavelength $400 \mathrm{~nm}$ and $250 \mathrm{~nm}$ on a metal surface respectively. the work function of the metal in terms of Planck's constant $h$ and velocity of light $\mathrm{c}$ is

142258 If the frequency of incident light falling on a photosensitive metal is doubled, the kinetic energy of the emitted photoelectron is

142259 A photo detector used to detect the wavelength of $1700 \mathrm{~nm}$, has energy gap of about

142255 If the work functions of three photosensitive materials are $1 \mathrm{eV}, 2 \mathrm{eV}$ and $3 \mathrm{eV}$ respectively, then the ratio of the respective frequencies of light that produce photoelectrons of maximum kinetic energy of $1 \mathrm{eV}$ from each of them is

142256 The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $600 \mathrm{~nm}$ is incident on it. The energy band gap (in $\mathrm{eV}$ ) for the semiconductor is

142257 The maximum velocities of the photoelectrons ejected are $\mathrm{V}$ and $2 \mathrm{~V}$ for the incident light of wavelength $400 \mathrm{~nm}$ and $250 \mathrm{~nm}$ on a metal surface respectively. the work function of the metal in terms of Planck's constant $h$ and velocity of light $\mathrm{c}$ is

142258 If the frequency of incident light falling on a photosensitive metal is doubled, the kinetic energy of the emitted photoelectron is

142259 A photo detector used to detect the wavelength of $1700 \mathrm{~nm}$, has energy gap of about