365521 The \(dc\) common emitter current gain of a \(n\) - \(p\) - \(n\) transistor is 50. The potential difference applied across the collector and emitter of a transistor used in \(CE\) configuration is \({V_{CE}} = 2V\). If the collector resistance \({R_C} = 4k\Omega \), the base current \(\left( {{I_B}} \right)\) and the collector current \(\left( {{I_C}} \right)\) are
365521 The \(dc\) common emitter current gain of a \(n\) - \(p\) - \(n\) transistor is 50. The potential difference applied across the collector and emitter of a transistor used in \(CE\) configuration is \({V_{CE}} = 2V\). If the collector resistance \({R_C} = 4k\Omega \), the base current \(\left( {{I_B}} \right)\) and the collector current \(\left( {{I_C}} \right)\) are
365521 The \(dc\) common emitter current gain of a \(n\) - \(p\) - \(n\) transistor is 50. The potential difference applied across the collector and emitter of a transistor used in \(CE\) configuration is \({V_{CE}} = 2V\). If the collector resistance \({R_C} = 4k\Omega \), the base current \(\left( {{I_B}} \right)\) and the collector current \(\left( {{I_C}} \right)\) are
365521 The \(dc\) common emitter current gain of a \(n\) - \(p\) - \(n\) transistor is 50. The potential difference applied across the collector and emitter of a transistor used in \(CE\) configuration is \({V_{CE}} = 2V\). If the collector resistance \({R_C} = 4k\Omega \), the base current \(\left( {{I_B}} \right)\) and the collector current \(\left( {{I_C}} \right)\) are
365521 The \(dc\) common emitter current gain of a \(n\) - \(p\) - \(n\) transistor is 50. The potential difference applied across the collector and emitter of a transistor used in \(CE\) configuration is \({V_{CE}} = 2V\). If the collector resistance \({R_C} = 4k\Omega \), the base current \(\left( {{I_B}} \right)\) and the collector current \(\left( {{I_C}} \right)\) are