PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365350
On reverse biasing the \({p-n}\) junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
On reverse biasing the \({p-n}\) junction, applied electric field and barrier electric field both are in same direction. So depletion layer broadens. Hence potential barrier is fortified. So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365350
On reverse biasing the \({p-n}\) junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
On reverse biasing the \({p-n}\) junction, applied electric field and barrier electric field both are in same direction. So depletion layer broadens. Hence potential barrier is fortified. So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365350
On reverse biasing the \({p-n}\) junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
On reverse biasing the \({p-n}\) junction, applied electric field and barrier electric field both are in same direction. So depletion layer broadens. Hence potential barrier is fortified. So correct option is (2)
PHXII14:SEMICONDUCTOR ELECTRONICS- MATERIALS- DEVICES AND SIMPLE CIRCUITS
365350
On reverse biasing the \({p-n}\) junction, its potential barrier becomes
1 narrow
2 broad
3 zero
4 constant
Explanation:
On reverse biasing the \({p-n}\) junction, applied electric field and barrier electric field both are in same direction. So depletion layer broadens. Hence potential barrier is fortified. So correct option is (2)
