An extrinsic semiconductor is a type of semiconductor which has been doped. So correct option is (4).
CHXII01:THE SOLID STATE
318796
Silicon doped with gallium forms
1 both \(n\) and \(p\) type semiconductor
2 an intrinsic semiconductor
3 p-type semiconductor
4 n-type semiconductor.
Explanation:
When silicon doped with group III A elements like Al, B, Ga etc. p-type semi conductors are formed.
KCET - 2020
CHXII01:THE SOLID STATE
318797
The electrical conductivity of semiconductors increase with the rise in temperature due to
1 Electrons start moving randomly
2 Gap between conduction band and valence band decreases
3 Electrons jump from valence band to conduction band due to small gap.
4 Gap between conduction band and valence band increases.
Explanation:
The gap between conduction band and valence band is small in semiconductors, therefore, electrons from the valence band can jump to the conduction band on increasing temperature. Thus, they become more conducting as the temperature increases.
CHXII01:THE SOLID STATE
318798
To get n-type semiconductor, the impurity to be added to silicon should have which of the following number of valence electrons?
1 1
2 3
3 2
4 5
Explanation:
For n-type, impurity to be added to silicon should have more than four valence electrons.
NEET Test Series from KOTA - 10 Papers In MS WORD
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CHXII01:THE SOLID STATE
318795
Extrinsic semi-conduction is due to
1 purity of crystal
2 low temperature
3 thermal defect .
4 impurity in crystal.
Explanation:
An extrinsic semiconductor is a type of semiconductor which has been doped. So correct option is (4).
CHXII01:THE SOLID STATE
318796
Silicon doped with gallium forms
1 both \(n\) and \(p\) type semiconductor
2 an intrinsic semiconductor
3 p-type semiconductor
4 n-type semiconductor.
Explanation:
When silicon doped with group III A elements like Al, B, Ga etc. p-type semi conductors are formed.
KCET - 2020
CHXII01:THE SOLID STATE
318797
The electrical conductivity of semiconductors increase with the rise in temperature due to
1 Electrons start moving randomly
2 Gap between conduction band and valence band decreases
3 Electrons jump from valence band to conduction band due to small gap.
4 Gap between conduction band and valence band increases.
Explanation:
The gap between conduction band and valence band is small in semiconductors, therefore, electrons from the valence band can jump to the conduction band on increasing temperature. Thus, they become more conducting as the temperature increases.
CHXII01:THE SOLID STATE
318798
To get n-type semiconductor, the impurity to be added to silicon should have which of the following number of valence electrons?
1 1
2 3
3 2
4 5
Explanation:
For n-type, impurity to be added to silicon should have more than four valence electrons.
An extrinsic semiconductor is a type of semiconductor which has been doped. So correct option is (4).
CHXII01:THE SOLID STATE
318796
Silicon doped with gallium forms
1 both \(n\) and \(p\) type semiconductor
2 an intrinsic semiconductor
3 p-type semiconductor
4 n-type semiconductor.
Explanation:
When silicon doped with group III A elements like Al, B, Ga etc. p-type semi conductors are formed.
KCET - 2020
CHXII01:THE SOLID STATE
318797
The electrical conductivity of semiconductors increase with the rise in temperature due to
1 Electrons start moving randomly
2 Gap between conduction band and valence band decreases
3 Electrons jump from valence band to conduction band due to small gap.
4 Gap between conduction band and valence band increases.
Explanation:
The gap between conduction band and valence band is small in semiconductors, therefore, electrons from the valence band can jump to the conduction band on increasing temperature. Thus, they become more conducting as the temperature increases.
CHXII01:THE SOLID STATE
318798
To get n-type semiconductor, the impurity to be added to silicon should have which of the following number of valence electrons?
1 1
2 3
3 2
4 5
Explanation:
For n-type, impurity to be added to silicon should have more than four valence electrons.
An extrinsic semiconductor is a type of semiconductor which has been doped. So correct option is (4).
CHXII01:THE SOLID STATE
318796
Silicon doped with gallium forms
1 both \(n\) and \(p\) type semiconductor
2 an intrinsic semiconductor
3 p-type semiconductor
4 n-type semiconductor.
Explanation:
When silicon doped with group III A elements like Al, B, Ga etc. p-type semi conductors are formed.
KCET - 2020
CHXII01:THE SOLID STATE
318797
The electrical conductivity of semiconductors increase with the rise in temperature due to
1 Electrons start moving randomly
2 Gap between conduction band and valence band decreases
3 Electrons jump from valence band to conduction band due to small gap.
4 Gap between conduction band and valence band increases.
Explanation:
The gap between conduction band and valence band is small in semiconductors, therefore, electrons from the valence band can jump to the conduction band on increasing temperature. Thus, they become more conducting as the temperature increases.
CHXII01:THE SOLID STATE
318798
To get n-type semiconductor, the impurity to be added to silicon should have which of the following number of valence electrons?
1 1
2 3
3 2
4 5
Explanation:
For n-type, impurity to be added to silicon should have more than four valence electrons.
