Junction Transistors (npn, pnp)
Semiconductor Electronics Material Devices and Simple Circuits

151059 The output resistance of a common emitter transistor amplifier, if the input resistance is \(\mathbf{2 0 0} \Omega\left(\alpha=0.98\right.\) and power gain is \(\left.5 \times 10^6\right)\) is.

1 \(516 \mathrm{k} \Omega\)
2 \(216 \mathrm{k} \Omega\)
3 \(300 \mathrm{k} \Omega\)
4 \(416 \mathrm{k} \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151060 Two triodes having amplification factors 30 and 21 and plate resistance \(5 \mathrm{k} \Omega\) and 4 \(\mathrm{k} \Omega\) respectively are connected in parallel. The composite amplification factor of the system is

1 25
2 50
3 75
4 100
Semiconductor Electronics Material Devices and Simple Circuits

151061 For a transistor in common base, the current gain is 0.95 . If the load resistance is \(400 \mathrm{k} \Omega\) and input resistance is \(200 \Omega\), then the voltage gain and power gain will be

1 1900 and 1800
2 1900 and 1805
3 5525 and 3591
4 1805 and 1900
Semiconductor Electronics Material Devices and Simple Circuits

151063 An amplifier has a voltage gain \(A_v=1000\). The voltage gain in \(\mathrm{dB}\) is

1 \(30 \mathrm{~dB}\)
2 \(60 \mathrm{~dB}\)
3 \(3 \mathrm{~dB}\)
4 \(20 \mathrm{~dB}\)
Semiconductor Electronics Material Devices and Simple Circuits

151064 For a transistor \(I_E=25 \mathrm{~mA}\) and \(I_B=1 \mathrm{~mA}\), the value of current gain \(\alpha\) will be :

1 \(\frac{25}{24}\)
2 \(\frac{24}{25}\)
3 \(\frac{25}{26}\)
4 \(\frac{26}{25}\)
Semiconductor Electronics Material Devices and Simple Circuits

151059 The output resistance of a common emitter transistor amplifier, if the input resistance is \(\mathbf{2 0 0} \Omega\left(\alpha=0.98\right.\) and power gain is \(\left.5 \times 10^6\right)\) is.

1 \(516 \mathrm{k} \Omega\)
2 \(216 \mathrm{k} \Omega\)
3 \(300 \mathrm{k} \Omega\)
4 \(416 \mathrm{k} \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151060 Two triodes having amplification factors 30 and 21 and plate resistance \(5 \mathrm{k} \Omega\) and 4 \(\mathrm{k} \Omega\) respectively are connected in parallel. The composite amplification factor of the system is

1 25
2 50
3 75
4 100
Semiconductor Electronics Material Devices and Simple Circuits

151061 For a transistor in common base, the current gain is 0.95 . If the load resistance is \(400 \mathrm{k} \Omega\) and input resistance is \(200 \Omega\), then the voltage gain and power gain will be

1 1900 and 1800
2 1900 and 1805
3 5525 and 3591
4 1805 and 1900
Semiconductor Electronics Material Devices and Simple Circuits

151063 An amplifier has a voltage gain \(A_v=1000\). The voltage gain in \(\mathrm{dB}\) is

1 \(30 \mathrm{~dB}\)
2 \(60 \mathrm{~dB}\)
3 \(3 \mathrm{~dB}\)
4 \(20 \mathrm{~dB}\)
Semiconductor Electronics Material Devices and Simple Circuits

151064 For a transistor \(I_E=25 \mathrm{~mA}\) and \(I_B=1 \mathrm{~mA}\), the value of current gain \(\alpha\) will be :

1 \(\frac{25}{24}\)
2 \(\frac{24}{25}\)
3 \(\frac{25}{26}\)
4 \(\frac{26}{25}\)
Semiconductor Electronics Material Devices and Simple Circuits

151059 The output resistance of a common emitter transistor amplifier, if the input resistance is \(\mathbf{2 0 0} \Omega\left(\alpha=0.98\right.\) and power gain is \(\left.5 \times 10^6\right)\) is.

1 \(516 \mathrm{k} \Omega\)
2 \(216 \mathrm{k} \Omega\)
3 \(300 \mathrm{k} \Omega\)
4 \(416 \mathrm{k} \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151060 Two triodes having amplification factors 30 and 21 and plate resistance \(5 \mathrm{k} \Omega\) and 4 \(\mathrm{k} \Omega\) respectively are connected in parallel. The composite amplification factor of the system is

1 25
2 50
3 75
4 100
Semiconductor Electronics Material Devices and Simple Circuits

151061 For a transistor in common base, the current gain is 0.95 . If the load resistance is \(400 \mathrm{k} \Omega\) and input resistance is \(200 \Omega\), then the voltage gain and power gain will be

1 1900 and 1800
2 1900 and 1805
3 5525 and 3591
4 1805 and 1900
Semiconductor Electronics Material Devices and Simple Circuits

151063 An amplifier has a voltage gain \(A_v=1000\). The voltage gain in \(\mathrm{dB}\) is

1 \(30 \mathrm{~dB}\)
2 \(60 \mathrm{~dB}\)
3 \(3 \mathrm{~dB}\)
4 \(20 \mathrm{~dB}\)
Semiconductor Electronics Material Devices and Simple Circuits

151064 For a transistor \(I_E=25 \mathrm{~mA}\) and \(I_B=1 \mathrm{~mA}\), the value of current gain \(\alpha\) will be :

1 \(\frac{25}{24}\)
2 \(\frac{24}{25}\)
3 \(\frac{25}{26}\)
4 \(\frac{26}{25}\)
NEET Test Series from KOTA - 10 Papers In MS WORD WhatsApp Here
Semiconductor Electronics Material Devices and Simple Circuits

151059 The output resistance of a common emitter transistor amplifier, if the input resistance is \(\mathbf{2 0 0} \Omega\left(\alpha=0.98\right.\) and power gain is \(\left.5 \times 10^6\right)\) is.

1 \(516 \mathrm{k} \Omega\)
2 \(216 \mathrm{k} \Omega\)
3 \(300 \mathrm{k} \Omega\)
4 \(416 \mathrm{k} \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151060 Two triodes having amplification factors 30 and 21 and plate resistance \(5 \mathrm{k} \Omega\) and 4 \(\mathrm{k} \Omega\) respectively are connected in parallel. The composite amplification factor of the system is

1 25
2 50
3 75
4 100
Semiconductor Electronics Material Devices and Simple Circuits

151061 For a transistor in common base, the current gain is 0.95 . If the load resistance is \(400 \mathrm{k} \Omega\) and input resistance is \(200 \Omega\), then the voltage gain and power gain will be

1 1900 and 1800
2 1900 and 1805
3 5525 and 3591
4 1805 and 1900
Semiconductor Electronics Material Devices and Simple Circuits

151063 An amplifier has a voltage gain \(A_v=1000\). The voltage gain in \(\mathrm{dB}\) is

1 \(30 \mathrm{~dB}\)
2 \(60 \mathrm{~dB}\)
3 \(3 \mathrm{~dB}\)
4 \(20 \mathrm{~dB}\)
Semiconductor Electronics Material Devices and Simple Circuits

151064 For a transistor \(I_E=25 \mathrm{~mA}\) and \(I_B=1 \mathrm{~mA}\), the value of current gain \(\alpha\) will be :

1 \(\frac{25}{24}\)
2 \(\frac{24}{25}\)
3 \(\frac{25}{26}\)
4 \(\frac{26}{25}\)
Semiconductor Electronics Material Devices and Simple Circuits

151059 The output resistance of a common emitter transistor amplifier, if the input resistance is \(\mathbf{2 0 0} \Omega\left(\alpha=0.98\right.\) and power gain is \(\left.5 \times 10^6\right)\) is.

1 \(516 \mathrm{k} \Omega\)
2 \(216 \mathrm{k} \Omega\)
3 \(300 \mathrm{k} \Omega\)
4 \(416 \mathrm{k} \Omega\)
Semiconductor Electronics Material Devices and Simple Circuits

151060 Two triodes having amplification factors 30 and 21 and plate resistance \(5 \mathrm{k} \Omega\) and 4 \(\mathrm{k} \Omega\) respectively are connected in parallel. The composite amplification factor of the system is

1 25
2 50
3 75
4 100
Semiconductor Electronics Material Devices and Simple Circuits

151061 For a transistor in common base, the current gain is 0.95 . If the load resistance is \(400 \mathrm{k} \Omega\) and input resistance is \(200 \Omega\), then the voltage gain and power gain will be

1 1900 and 1800
2 1900 and 1805
3 5525 and 3591
4 1805 and 1900
Semiconductor Electronics Material Devices and Simple Circuits

151063 An amplifier has a voltage gain \(A_v=1000\). The voltage gain in \(\mathrm{dB}\) is

1 \(30 \mathrm{~dB}\)
2 \(60 \mathrm{~dB}\)
3 \(3 \mathrm{~dB}\)
4 \(20 \mathrm{~dB}\)
Semiconductor Electronics Material Devices and Simple Circuits

151064 For a transistor \(I_E=25 \mathrm{~mA}\) and \(I_B=1 \mathrm{~mA}\), the value of current gain \(\alpha\) will be :

1 \(\frac{25}{24}\)
2 \(\frac{24}{25}\)
3 \(\frac{25}{26}\)
4 \(\frac{26}{25}\)