151016 For a given transistor amplifier circuit in \(\mathrm{CE}\) configuration \(V_{c c}=1, V, R_c=1 \mathrm{~K} \Omega, R_b=100\) \(K \Omega\) and \(\beta=100\). value of base current \(I_b\) is

151017 In an n-p-n common emitter (CE) transistor the collector current changes from \(5 \mathrm{~mA}\) to 16 \(\mathrm{mA}\) for the change in base current from \(100 \mu \mathrm{A}\) and \(200 \mu \mathrm{A}\), respectively. The current gain of transistor is

151019 In a junction transistor, the collector current changes by \(6.8 \mathrm{~mA}\), if the emitter current is changed by \(7 \mathrm{~mA}\). For such transistor, the current amplification factor is

151020 Consider an amplifier circuit in which a transistor is used in common-emitter mode. The load resistance \(3 \mathrm{k} \Omega\). When a signal of 30 \(\mathrm{mV}\) is added to base emitter voltage, the base current is changed by \(30 \mu \mathrm{A}\) and the collector current is changed by \(3 \mathrm{~mA}\). The power gain in this circuit will be

151021 Determine \(V_{C E}\) in the following silicon based transistor circuit

151016 For a given transistor amplifier circuit in \(\mathrm{CE}\) configuration \(V_{c c}=1, V, R_c=1 \mathrm{~K} \Omega, R_b=100\) \(K \Omega\) and \(\beta=100\). value of base current \(I_b\) is

151017 In an n-p-n common emitter (CE) transistor the collector current changes from \(5 \mathrm{~mA}\) to 16 \(\mathrm{mA}\) for the change in base current from \(100 \mu \mathrm{A}\) and \(200 \mu \mathrm{A}\), respectively. The current gain of transistor is

151019 In a junction transistor, the collector current changes by \(6.8 \mathrm{~mA}\), if the emitter current is changed by \(7 \mathrm{~mA}\). For such transistor, the current amplification factor is

151020 Consider an amplifier circuit in which a transistor is used in common-emitter mode. The load resistance \(3 \mathrm{k} \Omega\). When a signal of 30 \(\mathrm{mV}\) is added to base emitter voltage, the base current is changed by \(30 \mu \mathrm{A}\) and the collector current is changed by \(3 \mathrm{~mA}\). The power gain in this circuit will be

151021 Determine \(V_{C E}\) in the following silicon based transistor circuit

151016 For a given transistor amplifier circuit in \(\mathrm{CE}\) configuration \(V_{c c}=1, V, R_c=1 \mathrm{~K} \Omega, R_b=100\) \(K \Omega\) and \(\beta=100\). value of base current \(I_b\) is

151017 In an n-p-n common emitter (CE) transistor the collector current changes from \(5 \mathrm{~mA}\) to 16 \(\mathrm{mA}\) for the change in base current from \(100 \mu \mathrm{A}\) and \(200 \mu \mathrm{A}\), respectively. The current gain of transistor is

151019 In a junction transistor, the collector current changes by \(6.8 \mathrm{~mA}\), if the emitter current is changed by \(7 \mathrm{~mA}\). For such transistor, the current amplification factor is

151020 Consider an amplifier circuit in which a transistor is used in common-emitter mode. The load resistance \(3 \mathrm{k} \Omega\). When a signal of 30 \(\mathrm{mV}\) is added to base emitter voltage, the base current is changed by \(30 \mu \mathrm{A}\) and the collector current is changed by \(3 \mathrm{~mA}\). The power gain in this circuit will be

151021 Determine \(V_{C E}\) in the following silicon based transistor circuit

151016 For a given transistor amplifier circuit in \(\mathrm{CE}\) configuration \(V_{c c}=1, V, R_c=1 \mathrm{~K} \Omega, R_b=100\) \(K \Omega\) and \(\beta=100\). value of base current \(I_b\) is

151017 In an n-p-n common emitter (CE) transistor the collector current changes from \(5 \mathrm{~mA}\) to 16 \(\mathrm{mA}\) for the change in base current from \(100 \mu \mathrm{A}\) and \(200 \mu \mathrm{A}\), respectively. The current gain of transistor is

151019 In a junction transistor, the collector current changes by \(6.8 \mathrm{~mA}\), if the emitter current is changed by \(7 \mathrm{~mA}\). For such transistor, the current amplification factor is

151020 Consider an amplifier circuit in which a transistor is used in common-emitter mode. The load resistance \(3 \mathrm{k} \Omega\). When a signal of 30 \(\mathrm{mV}\) is added to base emitter voltage, the base current is changed by \(30 \mu \mathrm{A}\) and the collector current is changed by \(3 \mathrm{~mA}\). The power gain in this circuit will be

151021 Determine \(V_{C E}\) in the following silicon based transistor circuit

151016 For a given transistor amplifier circuit in \(\mathrm{CE}\) configuration \(V_{c c}=1, V, R_c=1 \mathrm{~K} \Omega, R_b=100\) \(K \Omega\) and \(\beta=100\). value of base current \(I_b\) is

151017 In an n-p-n common emitter (CE) transistor the collector current changes from \(5 \mathrm{~mA}\) to 16 \(\mathrm{mA}\) for the change in base current from \(100 \mu \mathrm{A}\) and \(200 \mu \mathrm{A}\), respectively. The current gain of transistor is

151019 In a junction transistor, the collector current changes by \(6.8 \mathrm{~mA}\), if the emitter current is changed by \(7 \mathrm{~mA}\). For such transistor, the current amplification factor is

151020 Consider an amplifier circuit in which a transistor is used in common-emitter mode. The load resistance \(3 \mathrm{k} \Omega\). When a signal of 30 \(\mathrm{mV}\) is added to base emitter voltage, the base current is changed by \(30 \mu \mathrm{A}\) and the collector current is changed by \(3 \mathrm{~mA}\). The power gain in this circuit will be

151021 Determine \(V_{C E}\) in the following silicon based transistor circuit