Optoelectronic Junction Devices (Photodiode,LED,Solar Cell)
« Previous Topic: Zener Diode (Zener Breakdown),Voltage Regulator Next Topic: Junction Transistors (npn, pnp) »
Semiconductor Electronics Material Devices and Simple Circuits

150984 An LED (Light Emitting Diode) is constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). What is the wavelength of the emitted light?

1 \(650 \mathrm{~nm}\)
2 \(65 \AA\)
3 \(800 \mathrm{~nm}\)
4 \(8000 \AA\)
AIIMS-2010
Semiconductor Electronics Material Devices and Simple Circuits

150985 Which one of the following symbols represents a photodiode?
original image

1 \((3)\)
2 (1)
3 \((2)\)
4 (4)
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits

150978 Given below are two statements : one is labelled as assertion \(A\) and the other is labelled as reason \(R\)
Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R : For a p-n junction diode, at applied voltage \(\mathrm{V}\) the current in the forward bias is more than the current in the reverse bias for \(\left|\mathrm{V}_{\mathrm{Z}}\right|> \pm \mathrm{V}\) \(\geq\left|V_0\right|\) where \(V_0\) is the threshold voltage and \(V_z\) is the breakdown voltage.
In the light of the above statements, choose the correct answer from the option given below

1 \(\mathrm{A}\) is true but \(\mathrm{R}\) is false
2 \(A\) is false but \(R\) is true
3 Both \(A\) and \(R\) are true but \(R\) is NOT the correct explanation \(\mathrm{A}\)
4 Both \(\mathrm{A}\) and \(\mathrm{R}\) are true and \(\mathrm{R}\) is correct explanation \(\mathrm{A}\)
JEE Main-25.01.2023
Semiconductor Electronics Material Devices and Simple Circuits

150991 When a monochromatic point source of light is at a distance of \(0.2 \mathrm{~m}\) from a photocell, the cutoff voltage and the saturation current are respectively \(V_0=0.6\) volt and \(I_s=18.0 \mathrm{~mA}\). If the same source is placed \(0.6 \mathrm{~m}\) away from the photocell, then

1 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
2 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
3 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
4 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
J and K CET- 2003
Semiconductor Electronics Material Devices and Simple Circuits

150994 The p-n photodiodes are fabricated from semiconductors with band gap of \(2.8 \mathrm{eV}\) and \(2.6 \mathrm{eV}\) respectively.
Choose the correct statement from the following.

1 Both diodes will detect \(460 \mathrm{~nm}\) light
2 First one will detect \(460 \mathrm{~nm}\) light
3 Second one will detect \(460 \mathrm{~nm}\) light
4 Both of them will not detect \(460 \mathrm{~nm}\) light
TS EAMCET (Medical)-02.05.2018
NEET DIGITAL LIBRARY
Semiconductor Electronics Material Devices and Simple Circuits

150984 An LED (Light Emitting Diode) is constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). What is the wavelength of the emitted light?

1 \(650 \mathrm{~nm}\)
2 \(65 \AA\)
3 \(800 \mathrm{~nm}\)
4 \(8000 \AA\)
AIIMS-2010
Semiconductor Electronics Material Devices and Simple Circuits

150985 Which one of the following symbols represents a photodiode?
original image

1 \((3)\)
2 (1)
3 \((2)\)
4 (4)
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits

150978 Given below are two statements : one is labelled as assertion \(A\) and the other is labelled as reason \(R\)
Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R : For a p-n junction diode, at applied voltage \(\mathrm{V}\) the current in the forward bias is more than the current in the reverse bias for \(\left|\mathrm{V}_{\mathrm{Z}}\right|> \pm \mathrm{V}\) \(\geq\left|V_0\right|\) where \(V_0\) is the threshold voltage and \(V_z\) is the breakdown voltage.
In the light of the above statements, choose the correct answer from the option given below

1 \(\mathrm{A}\) is true but \(\mathrm{R}\) is false
2 \(A\) is false but \(R\) is true
3 Both \(A\) and \(R\) are true but \(R\) is NOT the correct explanation \(\mathrm{A}\)
4 Both \(\mathrm{A}\) and \(\mathrm{R}\) are true and \(\mathrm{R}\) is correct explanation \(\mathrm{A}\)
JEE Main-25.01.2023
Semiconductor Electronics Material Devices and Simple Circuits

150991 When a monochromatic point source of light is at a distance of \(0.2 \mathrm{~m}\) from a photocell, the cutoff voltage and the saturation current are respectively \(V_0=0.6\) volt and \(I_s=18.0 \mathrm{~mA}\). If the same source is placed \(0.6 \mathrm{~m}\) away from the photocell, then

1 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
2 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
3 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
4 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
J and K CET- 2003
Semiconductor Electronics Material Devices and Simple Circuits

150994 The p-n photodiodes are fabricated from semiconductors with band gap of \(2.8 \mathrm{eV}\) and \(2.6 \mathrm{eV}\) respectively.
Choose the correct statement from the following.

1 Both diodes will detect \(460 \mathrm{~nm}\) light
2 First one will detect \(460 \mathrm{~nm}\) light
3 Second one will detect \(460 \mathrm{~nm}\) light
4 Both of them will not detect \(460 \mathrm{~nm}\) light
TS EAMCET (Medical)-02.05.2018
Join With Us for More Updates
Semiconductor Electronics Material Devices and Simple Circuits

150984 An LED (Light Emitting Diode) is constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). What is the wavelength of the emitted light?

1 \(650 \mathrm{~nm}\)
2 \(65 \AA\)
3 \(800 \mathrm{~nm}\)
4 \(8000 \AA\)
AIIMS-2010
Semiconductor Electronics Material Devices and Simple Circuits

150985 Which one of the following symbols represents a photodiode?
original image

1 \((3)\)
2 (1)
3 \((2)\)
4 (4)
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits

150978 Given below are two statements : one is labelled as assertion \(A\) and the other is labelled as reason \(R\)
Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R : For a p-n junction diode, at applied voltage \(\mathrm{V}\) the current in the forward bias is more than the current in the reverse bias for \(\left|\mathrm{V}_{\mathrm{Z}}\right|> \pm \mathrm{V}\) \(\geq\left|V_0\right|\) where \(V_0\) is the threshold voltage and \(V_z\) is the breakdown voltage.
In the light of the above statements, choose the correct answer from the option given below

1 \(\mathrm{A}\) is true but \(\mathrm{R}\) is false
2 \(A\) is false but \(R\) is true
3 Both \(A\) and \(R\) are true but \(R\) is NOT the correct explanation \(\mathrm{A}\)
4 Both \(\mathrm{A}\) and \(\mathrm{R}\) are true and \(\mathrm{R}\) is correct explanation \(\mathrm{A}\)
JEE Main-25.01.2023
Semiconductor Electronics Material Devices and Simple Circuits

150991 When a monochromatic point source of light is at a distance of \(0.2 \mathrm{~m}\) from a photocell, the cutoff voltage and the saturation current are respectively \(V_0=0.6\) volt and \(I_s=18.0 \mathrm{~mA}\). If the same source is placed \(0.6 \mathrm{~m}\) away from the photocell, then

1 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
2 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
3 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
4 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
J and K CET- 2003
Semiconductor Electronics Material Devices and Simple Circuits

150994 The p-n photodiodes are fabricated from semiconductors with band gap of \(2.8 \mathrm{eV}\) and \(2.6 \mathrm{eV}\) respectively.
Choose the correct statement from the following.

1 Both diodes will detect \(460 \mathrm{~nm}\) light
2 First one will detect \(460 \mathrm{~nm}\) light
3 Second one will detect \(460 \mathrm{~nm}\) light
4 Both of them will not detect \(460 \mathrm{~nm}\) light
TS EAMCET (Medical)-02.05.2018
For More Updates join with Us
Semiconductor Electronics Material Devices and Simple Circuits

150984 An LED (Light Emitting Diode) is constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). What is the wavelength of the emitted light?

1 \(650 \mathrm{~nm}\)
2 \(65 \AA\)
3 \(800 \mathrm{~nm}\)
4 \(8000 \AA\)
AIIMS-2010
Semiconductor Electronics Material Devices and Simple Circuits

150985 Which one of the following symbols represents a photodiode?
original image

1 \((3)\)
2 (1)
3 \((2)\)
4 (4)
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits

150978 Given below are two statements : one is labelled as assertion \(A\) and the other is labelled as reason \(R\)
Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R : For a p-n junction diode, at applied voltage \(\mathrm{V}\) the current in the forward bias is more than the current in the reverse bias for \(\left|\mathrm{V}_{\mathrm{Z}}\right|> \pm \mathrm{V}\) \(\geq\left|V_0\right|\) where \(V_0\) is the threshold voltage and \(V_z\) is the breakdown voltage.
In the light of the above statements, choose the correct answer from the option given below

1 \(\mathrm{A}\) is true but \(\mathrm{R}\) is false
2 \(A\) is false but \(R\) is true
3 Both \(A\) and \(R\) are true but \(R\) is NOT the correct explanation \(\mathrm{A}\)
4 Both \(\mathrm{A}\) and \(\mathrm{R}\) are true and \(\mathrm{R}\) is correct explanation \(\mathrm{A}\)
JEE Main-25.01.2023
Semiconductor Electronics Material Devices and Simple Circuits

150991 When a monochromatic point source of light is at a distance of \(0.2 \mathrm{~m}\) from a photocell, the cutoff voltage and the saturation current are respectively \(V_0=0.6\) volt and \(I_s=18.0 \mathrm{~mA}\). If the same source is placed \(0.6 \mathrm{~m}\) away from the photocell, then

1 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
2 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
3 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
4 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
J and K CET- 2003
Semiconductor Electronics Material Devices and Simple Circuits

150994 The p-n photodiodes are fabricated from semiconductors with band gap of \(2.8 \mathrm{eV}\) and \(2.6 \mathrm{eV}\) respectively.
Choose the correct statement from the following.

1 Both diodes will detect \(460 \mathrm{~nm}\) light
2 First one will detect \(460 \mathrm{~nm}\) light
3 Second one will detect \(460 \mathrm{~nm}\) light
4 Both of them will not detect \(460 \mathrm{~nm}\) light
TS EAMCET (Medical)-02.05.2018
NEET DIGITAL LIBRARY
Semiconductor Electronics Material Devices and Simple Circuits

150984 An LED (Light Emitting Diode) is constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is \(1.9 \mathrm{eV}\). What is the wavelength of the emitted light?

1 \(650 \mathrm{~nm}\)
2 \(65 \AA\)
3 \(800 \mathrm{~nm}\)
4 \(8000 \AA\)
AIIMS-2010
Semiconductor Electronics Material Devices and Simple Circuits

150985 Which one of the following symbols represents a photodiode?
original image

1 \((3)\)
2 (1)
3 \((2)\)
4 (4)
MHT-CET 2020
Semiconductor Electronics Material Devices and Simple Circuits

150978 Given below are two statements : one is labelled as assertion \(A\) and the other is labelled as reason \(R\)
Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R : For a p-n junction diode, at applied voltage \(\mathrm{V}\) the current in the forward bias is more than the current in the reverse bias for \(\left|\mathrm{V}_{\mathrm{Z}}\right|> \pm \mathrm{V}\) \(\geq\left|V_0\right|\) where \(V_0\) is the threshold voltage and \(V_z\) is the breakdown voltage.
In the light of the above statements, choose the correct answer from the option given below

1 \(\mathrm{A}\) is true but \(\mathrm{R}\) is false
2 \(A\) is false but \(R\) is true
3 Both \(A\) and \(R\) are true but \(R\) is NOT the correct explanation \(\mathrm{A}\)
4 Both \(\mathrm{A}\) and \(\mathrm{R}\) are true and \(\mathrm{R}\) is correct explanation \(\mathrm{A}\)
JEE Main-25.01.2023
Semiconductor Electronics Material Devices and Simple Circuits

150991 When a monochromatic point source of light is at a distance of \(0.2 \mathrm{~m}\) from a photocell, the cutoff voltage and the saturation current are respectively \(V_0=0.6\) volt and \(I_s=18.0 \mathrm{~mA}\). If the same source is placed \(0.6 \mathrm{~m}\) away from the photocell, then

1 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
2 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=18.0 \mathrm{~mA}\)
3 stopping potential \(\mathrm{V}_0=0.6\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
4 stopping potential \(\mathrm{V}_0=0.2\) volt and saturation current \(\mathrm{I}_{\mathrm{s}}=2.0 \mathrm{~mA}\)
J and K CET- 2003
Semiconductor Electronics Material Devices and Simple Circuits

150994 The p-n photodiodes are fabricated from semiconductors with band gap of \(2.8 \mathrm{eV}\) and \(2.6 \mathrm{eV}\) respectively.
Choose the correct statement from the following.

1 Both diodes will detect \(460 \mathrm{~nm}\) light
2 First one will detect \(460 \mathrm{~nm}\) light
3 Second one will detect \(460 \mathrm{~nm}\) light
4 Both of them will not detect \(460 \mathrm{~nm}\) light
TS EAMCET (Medical)-02.05.2018