Semiconductor Electronics Material Devices and Simple Circuits
150863
The reason of current flow in p-n junction in forward bias is
1 drifting of charge carriers
2 drifting of minority charge carriers
3 diffusion of charge carriers
4 All of the above
Explanation:
C During the formation of p-n function, holes and electrons diffuses with each other hence the current is flows due to diffusion of charge carrier.
JIPMER-2014
Semiconductor Electronics Material Devices and Simple Circuits
150866
The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. Ratio of dynamic resistance, corresponding to forward bias voltage of \(2 \mathrm{~V}\) and \(4 \mathrm{~V}\) respective is:
Semiconductor Electronics Material Devices and Simple Circuits
150871
In a \(p-n\) junction diode, the thickness of deplection layer is \(2 \times 10^{-6} \mathrm{~m}\) and barrier potential is \(0.3 \mathrm{~V}\). The intensity of the electric field at the junction is
1 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
2 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
3 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
4 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
Explanation:
C Given that, Width of depletion layer \((\mathrm{d})=2 \times 10^{-6} \mathrm{~m}\) Barrier potential \((\mathrm{V})=0.3 \mathrm{~V}\) \(\therefore\) Electric field, \(\mathrm{E} =\frac{\mathrm{V}}{\mathrm{d}}=\frac{0.3}{2 \times 10^{-6}}\) \(=\frac{0.3 \times 10^6}{2}\) \(\mathrm{E} =\frac{3 \times 10^5}{2}\) \(=1.5 \times 10^5 \mathrm{~V} / \mathrm{m}\)
AP EAMCET -2011
Semiconductor Electronics Material Devices and Simple Circuits
150872
The output current versus time curve of a rectifier is shown in the figure. The average value of output current in this case is
1 0
2 \(\frac{\mathrm{I}_0}{2}\)
3 \(\frac{2 \mathrm{I}_0}{\pi}\)
4 \(\mathrm{I}_0\)
Explanation:
C The given wave form is of full wave rectifier. We know that, \(\mathrm{I}_{\text {avg }}=\frac{2 \mathrm{I}_{\mathrm{m}}}{\pi}=\frac{2 \mathrm{I}_{\mathrm{o}}}{\pi}\) \(\because \quad \mathrm{I}_{\mathrm{m}}=\mathrm{I}_{\mathrm{o}}\) \(I_{\text {avg }}=\frac{2 I_0}{\pi}\)
Semiconductor Electronics Material Devices and Simple Circuits
150863
The reason of current flow in p-n junction in forward bias is
1 drifting of charge carriers
2 drifting of minority charge carriers
3 diffusion of charge carriers
4 All of the above
Explanation:
C During the formation of p-n function, holes and electrons diffuses with each other hence the current is flows due to diffusion of charge carrier.
JIPMER-2014
Semiconductor Electronics Material Devices and Simple Circuits
150866
The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. Ratio of dynamic resistance, corresponding to forward bias voltage of \(2 \mathrm{~V}\) and \(4 \mathrm{~V}\) respective is:
Semiconductor Electronics Material Devices and Simple Circuits
150871
In a \(p-n\) junction diode, the thickness of deplection layer is \(2 \times 10^{-6} \mathrm{~m}\) and barrier potential is \(0.3 \mathrm{~V}\). The intensity of the electric field at the junction is
1 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
2 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
3 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
4 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
Explanation:
C Given that, Width of depletion layer \((\mathrm{d})=2 \times 10^{-6} \mathrm{~m}\) Barrier potential \((\mathrm{V})=0.3 \mathrm{~V}\) \(\therefore\) Electric field, \(\mathrm{E} =\frac{\mathrm{V}}{\mathrm{d}}=\frac{0.3}{2 \times 10^{-6}}\) \(=\frac{0.3 \times 10^6}{2}\) \(\mathrm{E} =\frac{3 \times 10^5}{2}\) \(=1.5 \times 10^5 \mathrm{~V} / \mathrm{m}\)
AP EAMCET -2011
Semiconductor Electronics Material Devices and Simple Circuits
150872
The output current versus time curve of a rectifier is shown in the figure. The average value of output current in this case is
1 0
2 \(\frac{\mathrm{I}_0}{2}\)
3 \(\frac{2 \mathrm{I}_0}{\pi}\)
4 \(\mathrm{I}_0\)
Explanation:
C The given wave form is of full wave rectifier. We know that, \(\mathrm{I}_{\text {avg }}=\frac{2 \mathrm{I}_{\mathrm{m}}}{\pi}=\frac{2 \mathrm{I}_{\mathrm{o}}}{\pi}\) \(\because \quad \mathrm{I}_{\mathrm{m}}=\mathrm{I}_{\mathrm{o}}\) \(I_{\text {avg }}=\frac{2 I_0}{\pi}\)
NEET Test Series from KOTA - 10 Papers In MS WORD
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Semiconductor Electronics Material Devices and Simple Circuits
150863
The reason of current flow in p-n junction in forward bias is
1 drifting of charge carriers
2 drifting of minority charge carriers
3 diffusion of charge carriers
4 All of the above
Explanation:
C During the formation of p-n function, holes and electrons diffuses with each other hence the current is flows due to diffusion of charge carrier.
JIPMER-2014
Semiconductor Electronics Material Devices and Simple Circuits
150866
The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. Ratio of dynamic resistance, corresponding to forward bias voltage of \(2 \mathrm{~V}\) and \(4 \mathrm{~V}\) respective is:
Semiconductor Electronics Material Devices and Simple Circuits
150871
In a \(p-n\) junction diode, the thickness of deplection layer is \(2 \times 10^{-6} \mathrm{~m}\) and barrier potential is \(0.3 \mathrm{~V}\). The intensity of the electric field at the junction is
1 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
2 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
3 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
4 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
Explanation:
C Given that, Width of depletion layer \((\mathrm{d})=2 \times 10^{-6} \mathrm{~m}\) Barrier potential \((\mathrm{V})=0.3 \mathrm{~V}\) \(\therefore\) Electric field, \(\mathrm{E} =\frac{\mathrm{V}}{\mathrm{d}}=\frac{0.3}{2 \times 10^{-6}}\) \(=\frac{0.3 \times 10^6}{2}\) \(\mathrm{E} =\frac{3 \times 10^5}{2}\) \(=1.5 \times 10^5 \mathrm{~V} / \mathrm{m}\)
AP EAMCET -2011
Semiconductor Electronics Material Devices and Simple Circuits
150872
The output current versus time curve of a rectifier is shown in the figure. The average value of output current in this case is
1 0
2 \(\frac{\mathrm{I}_0}{2}\)
3 \(\frac{2 \mathrm{I}_0}{\pi}\)
4 \(\mathrm{I}_0\)
Explanation:
C The given wave form is of full wave rectifier. We know that, \(\mathrm{I}_{\text {avg }}=\frac{2 \mathrm{I}_{\mathrm{m}}}{\pi}=\frac{2 \mathrm{I}_{\mathrm{o}}}{\pi}\) \(\because \quad \mathrm{I}_{\mathrm{m}}=\mathrm{I}_{\mathrm{o}}\) \(I_{\text {avg }}=\frac{2 I_0}{\pi}\)
Semiconductor Electronics Material Devices and Simple Circuits
150863
The reason of current flow in p-n junction in forward bias is
1 drifting of charge carriers
2 drifting of minority charge carriers
3 diffusion of charge carriers
4 All of the above
Explanation:
C During the formation of p-n function, holes and electrons diffuses with each other hence the current is flows due to diffusion of charge carrier.
JIPMER-2014
Semiconductor Electronics Material Devices and Simple Circuits
150866
The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. Ratio of dynamic resistance, corresponding to forward bias voltage of \(2 \mathrm{~V}\) and \(4 \mathrm{~V}\) respective is:
Semiconductor Electronics Material Devices and Simple Circuits
150871
In a \(p-n\) junction diode, the thickness of deplection layer is \(2 \times 10^{-6} \mathrm{~m}\) and barrier potential is \(0.3 \mathrm{~V}\). The intensity of the electric field at the junction is
1 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
2 \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
3 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{n}\) to \(\mathrm{p}\) side
4 \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(\mathrm{p}\) to \(\mathrm{n}\) side
Explanation:
C Given that, Width of depletion layer \((\mathrm{d})=2 \times 10^{-6} \mathrm{~m}\) Barrier potential \((\mathrm{V})=0.3 \mathrm{~V}\) \(\therefore\) Electric field, \(\mathrm{E} =\frac{\mathrm{V}}{\mathrm{d}}=\frac{0.3}{2 \times 10^{-6}}\) \(=\frac{0.3 \times 10^6}{2}\) \(\mathrm{E} =\frac{3 \times 10^5}{2}\) \(=1.5 \times 10^5 \mathrm{~V} / \mathrm{m}\)
AP EAMCET -2011
Semiconductor Electronics Material Devices and Simple Circuits
150872
The output current versus time curve of a rectifier is shown in the figure. The average value of output current in this case is
1 0
2 \(\frac{\mathrm{I}_0}{2}\)
3 \(\frac{2 \mathrm{I}_0}{\pi}\)
4 \(\mathrm{I}_0\)
Explanation:
C The given wave form is of full wave rectifier. We know that, \(\mathrm{I}_{\text {avg }}=\frac{2 \mathrm{I}_{\mathrm{m}}}{\pi}=\frac{2 \mathrm{I}_{\mathrm{o}}}{\pi}\) \(\because \quad \mathrm{I}_{\mathrm{m}}=\mathrm{I}_{\mathrm{o}}\) \(I_{\text {avg }}=\frac{2 I_0}{\pi}\)
