150787 For the given circuit of \(p-n\) junction, the potential barrier is-

150792 In the circuit given below the value of current is

150794 A silicon diode has threshold voltage of \(0.7 \mathrm{~V}\). If an input voltage given by \(2 \sin (\pi t)\) is supplied to a half-wave rectifier circuit using this diode, the rectified output has a peak value of :

150795 Two junction diodes one of germanium (Ge) and other of silicon \((\mathrm{Si})\) are connected as shown in figure to a battery of emf \(12 \mathrm{~V}\) and a load resistance \(10 \mathrm{k} \Omega\). The germanium diode conducts at \(0.3 \mathrm{~V}\) and silicon diode at \(0.7 \mathrm{~V}\). When a current flows in the circuit, then the potential of terminal \(Y\) will be

150787 For the given circuit of \(p-n\) junction, the potential barrier is-

150792 In the circuit given below the value of current is

150794 A silicon diode has threshold voltage of \(0.7 \mathrm{~V}\). If an input voltage given by \(2 \sin (\pi t)\) is supplied to a half-wave rectifier circuit using this diode, the rectified output has a peak value of :

150795 Two junction diodes one of germanium (Ge) and other of silicon \((\mathrm{Si})\) are connected as shown in figure to a battery of emf \(12 \mathrm{~V}\) and a load resistance \(10 \mathrm{k} \Omega\). The germanium diode conducts at \(0.3 \mathrm{~V}\) and silicon diode at \(0.7 \mathrm{~V}\). When a current flows in the circuit, then the potential of terminal \(Y\) will be

150787 For the given circuit of \(p-n\) junction, the potential barrier is-

150792 In the circuit given below the value of current is

150794 A silicon diode has threshold voltage of \(0.7 \mathrm{~V}\). If an input voltage given by \(2 \sin (\pi t)\) is supplied to a half-wave rectifier circuit using this diode, the rectified output has a peak value of :

150795 Two junction diodes one of germanium (Ge) and other of silicon \((\mathrm{Si})\) are connected as shown in figure to a battery of emf \(12 \mathrm{~V}\) and a load resistance \(10 \mathrm{k} \Omega\). The germanium diode conducts at \(0.3 \mathrm{~V}\) and silicon diode at \(0.7 \mathrm{~V}\). When a current flows in the circuit, then the potential of terminal \(Y\) will be

150787 For the given circuit of \(p-n\) junction, the potential barrier is-

150792 In the circuit given below the value of current is

150794 A silicon diode has threshold voltage of \(0.7 \mathrm{~V}\). If an input voltage given by \(2 \sin (\pi t)\) is supplied to a half-wave rectifier circuit using this diode, the rectified output has a peak value of :

150795 Two junction diodes one of germanium (Ge) and other of silicon \((\mathrm{Si})\) are connected as shown in figure to a battery of emf \(12 \mathrm{~V}\) and a load resistance \(10 \mathrm{k} \Omega\). The germanium diode conducts at \(0.3 \mathrm{~V}\) and silicon diode at \(0.7 \mathrm{~V}\). When a current flows in the circuit, then the potential of terminal \(Y\) will be