150704
Statement I :When a Si sample is doped with Boron, it becomes \(\mathrm{P}\) type and when doped by Arsenic it becomes N-type semi conductor such that \(\mathrm{P}\)-type has excess holes and \(\mathrm{N}\)-type has excess electros.
Statement II : When such P-type and N-type semi-conductors, are fused to make junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below
150709 A p-n junction diode can withstand up to 20 \(\mathrm{mA}\) current under forward bias. The diode has a potential difference of \(0.5 \mathrm{~V}\) across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of \(125 \Omega\) is connected in series with it?
150710 The voltage-current characteristic of a diode during forward bias is given by \(I=7.8 \times 10^{-5} \mathrm{e}^{6.9 \mathrm{~V}_{\mathrm{b}}}\), where \(I\) is the current in \(\mathrm{mA}\) and \(V_D\) is the diode voltage in \(V\). Find the dynamic resistance of the diode in \(\Omega\) when the current is \(4 \mathrm{~mA}\).
150711
In a \(p-n\) junction diode, an electric field of magnitude \(2 \times 10^5 \mathrm{~V} / \mathrm{m}\) exists in the depletion region. A particle with charge -3 e can diffuse from \(n\)-side to \(\mathrm{p}\)-side, if it has minimum kinetic energy \(0.6 \mathrm{eV}\).
The width of the depletion region of the \(p-n\) junction is
150704
Statement I :When a Si sample is doped with Boron, it becomes \(\mathrm{P}\) type and when doped by Arsenic it becomes N-type semi conductor such that \(\mathrm{P}\)-type has excess holes and \(\mathrm{N}\)-type has excess electros.
Statement II : When such P-type and N-type semi-conductors, are fused to make junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below
150709 A p-n junction diode can withstand up to 20 \(\mathrm{mA}\) current under forward bias. The diode has a potential difference of \(0.5 \mathrm{~V}\) across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of \(125 \Omega\) is connected in series with it?
150710 The voltage-current characteristic of a diode during forward bias is given by \(I=7.8 \times 10^{-5} \mathrm{e}^{6.9 \mathrm{~V}_{\mathrm{b}}}\), where \(I\) is the current in \(\mathrm{mA}\) and \(V_D\) is the diode voltage in \(V\). Find the dynamic resistance of the diode in \(\Omega\) when the current is \(4 \mathrm{~mA}\).
150711
In a \(p-n\) junction diode, an electric field of magnitude \(2 \times 10^5 \mathrm{~V} / \mathrm{m}\) exists in the depletion region. A particle with charge -3 e can diffuse from \(n\)-side to \(\mathrm{p}\)-side, if it has minimum kinetic energy \(0.6 \mathrm{eV}\).
The width of the depletion region of the \(p-n\) junction is
150704
Statement I :When a Si sample is doped with Boron, it becomes \(\mathrm{P}\) type and when doped by Arsenic it becomes N-type semi conductor such that \(\mathrm{P}\)-type has excess holes and \(\mathrm{N}\)-type has excess electros.
Statement II : When such P-type and N-type semi-conductors, are fused to make junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below
150709 A p-n junction diode can withstand up to 20 \(\mathrm{mA}\) current under forward bias. The diode has a potential difference of \(0.5 \mathrm{~V}\) across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of \(125 \Omega\) is connected in series with it?
150710 The voltage-current characteristic of a diode during forward bias is given by \(I=7.8 \times 10^{-5} \mathrm{e}^{6.9 \mathrm{~V}_{\mathrm{b}}}\), where \(I\) is the current in \(\mathrm{mA}\) and \(V_D\) is the diode voltage in \(V\). Find the dynamic resistance of the diode in \(\Omega\) when the current is \(4 \mathrm{~mA}\).
150711
In a \(p-n\) junction diode, an electric field of magnitude \(2 \times 10^5 \mathrm{~V} / \mathrm{m}\) exists in the depletion region. A particle with charge -3 e can diffuse from \(n\)-side to \(\mathrm{p}\)-side, if it has minimum kinetic energy \(0.6 \mathrm{eV}\).
The width of the depletion region of the \(p-n\) junction is
150704
Statement I :When a Si sample is doped with Boron, it becomes \(\mathrm{P}\) type and when doped by Arsenic it becomes N-type semi conductor such that \(\mathrm{P}\)-type has excess holes and \(\mathrm{N}\)-type has excess electros.
Statement II : When such P-type and N-type semi-conductors, are fused to make junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below
150709 A p-n junction diode can withstand up to 20 \(\mathrm{mA}\) current under forward bias. The diode has a potential difference of \(0.5 \mathrm{~V}\) across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of \(125 \Omega\) is connected in series with it?
150710 The voltage-current characteristic of a diode during forward bias is given by \(I=7.8 \times 10^{-5} \mathrm{e}^{6.9 \mathrm{~V}_{\mathrm{b}}}\), where \(I\) is the current in \(\mathrm{mA}\) and \(V_D\) is the diode voltage in \(V\). Find the dynamic resistance of the diode in \(\Omega\) when the current is \(4 \mathrm{~mA}\).
150711
In a \(p-n\) junction diode, an electric field of magnitude \(2 \times 10^5 \mathrm{~V} / \mathrm{m}\) exists in the depletion region. A particle with charge -3 e can diffuse from \(n\)-side to \(\mathrm{p}\)-side, if it has minimum kinetic energy \(0.6 \mathrm{eV}\).
The width of the depletion region of the \(p-n\) junction is
150704
Statement I :When a Si sample is doped with Boron, it becomes \(\mathrm{P}\) type and when doped by Arsenic it becomes N-type semi conductor such that \(\mathrm{P}\)-type has excess holes and \(\mathrm{N}\)-type has excess electros.
Statement II : When such P-type and N-type semi-conductors, are fused to make junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below
150709 A p-n junction diode can withstand up to 20 \(\mathrm{mA}\) current under forward bias. The diode has a potential difference of \(0.5 \mathrm{~V}\) across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of \(125 \Omega\) is connected in series with it?
150710 The voltage-current characteristic of a diode during forward bias is given by \(I=7.8 \times 10^{-5} \mathrm{e}^{6.9 \mathrm{~V}_{\mathrm{b}}}\), where \(I\) is the current in \(\mathrm{mA}\) and \(V_D\) is the diode voltage in \(V\). Find the dynamic resistance of the diode in \(\Omega\) when the current is \(4 \mathrm{~mA}\).
150711
In a \(p-n\) junction diode, an electric field of magnitude \(2 \times 10^5 \mathrm{~V} / \mathrm{m}\) exists in the depletion region. A particle with charge -3 e can diffuse from \(n\)-side to \(\mathrm{p}\)-side, if it has minimum kinetic energy \(0.6 \mathrm{eV}\).
The width of the depletion region of the \(p-n\) junction is