150491 In a p-type semiconductor the donor level is at \(50 \mathrm{meV}\) above the valence band. To produce one electron, the maximum wavelength of light photon required is (Planck's constant, \(h=6.6 \times\) \(10^{-34} \mathrm{Js}\) and speed of light in vacuum, \(\mathrm{c}=3 \times\) \(10^8 \mathrm{~ms}^{-1}\) )

150492 If a semiconductor has an intrinsic carrier concentration of \(1.41 \times 10^{16} / \mathrm{m}^3\), when doped with \(10^{21} / \mathrm{m}^3\) Phosphorus atoms, then the concentration of holes \(/ \mathrm{m}^3\) at room temperature will be

150500 In a semiconductor, 2/3rd of the total current is carried by electrons and remaining \(1 / 3\) rd by the holes. If at this temperature, the drift velocity of electrons is 3 times that of holes, the ratio of number density of electrons to that of holes is

150506 The electron drift speed is small and the charge of the electron is also small but still, we obtain large current in a conductor. This is due to

150491 In a p-type semiconductor the donor level is at \(50 \mathrm{meV}\) above the valence band. To produce one electron, the maximum wavelength of light photon required is (Planck's constant, \(h=6.6 \times\) \(10^{-34} \mathrm{Js}\) and speed of light in vacuum, \(\mathrm{c}=3 \times\) \(10^8 \mathrm{~ms}^{-1}\) )

150492 If a semiconductor has an intrinsic carrier concentration of \(1.41 \times 10^{16} / \mathrm{m}^3\), when doped with \(10^{21} / \mathrm{m}^3\) Phosphorus atoms, then the concentration of holes \(/ \mathrm{m}^3\) at room temperature will be

150500 In a semiconductor, 2/3rd of the total current is carried by electrons and remaining \(1 / 3\) rd by the holes. If at this temperature, the drift velocity of electrons is 3 times that of holes, the ratio of number density of electrons to that of holes is

150506 The electron drift speed is small and the charge of the electron is also small but still, we obtain large current in a conductor. This is due to

150491 In a p-type semiconductor the donor level is at \(50 \mathrm{meV}\) above the valence band. To produce one electron, the maximum wavelength of light photon required is (Planck's constant, \(h=6.6 \times\) \(10^{-34} \mathrm{Js}\) and speed of light in vacuum, \(\mathrm{c}=3 \times\) \(10^8 \mathrm{~ms}^{-1}\) )

150492 If a semiconductor has an intrinsic carrier concentration of \(1.41 \times 10^{16} / \mathrm{m}^3\), when doped with \(10^{21} / \mathrm{m}^3\) Phosphorus atoms, then the concentration of holes \(/ \mathrm{m}^3\) at room temperature will be

150500 In a semiconductor, 2/3rd of the total current is carried by electrons and remaining \(1 / 3\) rd by the holes. If at this temperature, the drift velocity of electrons is 3 times that of holes, the ratio of number density of electrons to that of holes is

150506 The electron drift speed is small and the charge of the electron is also small but still, we obtain large current in a conductor. This is due to

150491 In a p-type semiconductor the donor level is at \(50 \mathrm{meV}\) above the valence band. To produce one electron, the maximum wavelength of light photon required is (Planck's constant, \(h=6.6 \times\) \(10^{-34} \mathrm{Js}\) and speed of light in vacuum, \(\mathrm{c}=3 \times\) \(10^8 \mathrm{~ms}^{-1}\) )

150492 If a semiconductor has an intrinsic carrier concentration of \(1.41 \times 10^{16} / \mathrm{m}^3\), when doped with \(10^{21} / \mathrm{m}^3\) Phosphorus atoms, then the concentration of holes \(/ \mathrm{m}^3\) at room temperature will be

150500 In a semiconductor, 2/3rd of the total current is carried by electrons and remaining \(1 / 3\) rd by the holes. If at this temperature, the drift velocity of electrons is 3 times that of holes, the ratio of number density of electrons to that of holes is

150506 The electron drift speed is small and the charge of the electron is also small but still, we obtain large current in a conductor. This is due to